摘要:
A dual-axis sensor for measuring X and Y components of angular velocity in an X-Y sensor plane is provided. The dual-axis sensor includes a first subsensor for measuring the X component of angular velocity, and a second subsensor for measuring the Y component of angular velocity. The first subsensor and the second subsensor are contained within a single hermetic seal within the dual-axis sensor.
摘要:
A MEMs (microelectromechanical systems) structure is provided. In one implementation, the MEMs structure includes a substrate wafer including a MEMs device formed on a surface of the substrate wafer, and a MEMs cover structure to cover the MEMs device formed on the surface of the substrate wafer. The MEMs cover structure comprises a first wafer bonded to a second wafer, in which only the first wafer of the MEMs cover structure is sawed through and not the second wafer of the MEMs cover structure during dicing of the MEMs structure.
摘要:
An angular velocity sensor has two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the sensor about the Y axis can be sensed by driving the two masses into Z-directed antiphase oscillation and measuring the angular oscillation amplitude thereby imparted to the frame. In a preferred embodiment, the angular velocity sensor is fabricated from a bulk MEMS gyroscope wafer, a cap wafer and a reference wafer. In a further preferred embodiment, this assembly of wafers provides a hermetic barrier between the masses and an ambient environment.
摘要:
An angular velocity sensor has two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the sensor about the Y axis can be sensed by driving the two masses into Z-directed antiphase oscillation and measuring the angular oscillation amplitude thereby imparted to the frame. In a preferred embodiment, the angular velocity sensor is fabricated from a bulk MEMS gyroscope wafer, a cap wafer and a reference wafer. In a further preferred embodiment, this assembly of wafers provides a hermetic barrier between the masses and an ambient environment.
摘要:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
摘要:
A wafer-scale fabrication method for providing MEMS assemblies having a MEMS subassembly sandwiched between and bonded to a cap and a base is provided. The MEMS subassembly includes at least one MEMS device element flexibly connected to the MEMS assembly. The vertical separation between the MEMS device element and an electrode on the base is lithographically defined. Precise control of this critical vertical gap dimension is thereby provided. Fabrication cost is greatly reduced by wafer scale integration.
摘要:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
摘要:
A method for making an angular velocity sensor having two masses which are laterally disposed in an X-Y plane and indirectly connected to a frame provided. The two masses are linked together by a linkage such that they necessarily move in opposite directions along Z. Angular velocity of the sensor about the Y axis can be sensed by driving the two masses into Z-directed antiphase oscillation and measuring the angular oscillation amplitude thereby imparted to the frame. In a preferred embodiment, the angular velocity sensor is fabricated from a bulk MEMS gyroscope wafer, a cap wafer and a reference wafer. In a further preferred embodiment, this assembly wafers provides a hermetic barrier between the masses and an ambient environment.
摘要:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
摘要:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.