公开(公告)号：US20130178066A1

公开(公告)日：2013-07-11

申请号：US13823131

申请日：2011-10-06

申请人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

发明人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

IPC分类号： H01L21/306

CPC分类号： H01L21/306 ,  C23C16/4585 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/31111 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.

摘要翻译： 提供一种制造具有三维结构的存储器件的方法，其包括在衬底上交替堆叠一个或多个电介质层和一个或多个牺牲层，形成通过电介质层和牺牲层的通孔，形成 填充通孔的图案，形成穿过电介质层和牺牲层的开口，以及通过开口提供蚀刻剂以除去牺牲层。 电介质层的堆叠包括向衬底供给选自由SiH 4，Si 2 H 6，Si 3 H 8和Si 4 H 10组成的组中的一种或多种气体，以沉积氧化硅层。 牺牲层的堆叠包括向基板供应一种或多种选自SiH 4，Si 2 H 6，Si 3 H 8，Si 4 H 10和二氯硅烷（SiCl 2 H 2）的气体和氨基气体，以沉积氮化硅层。

公开(公告)号：US09425057B2

公开(公告)日：2016-08-23

申请号：US13822416

申请日：2011-10-06

申请人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

发明人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

IPC分类号： H01L21/306 ,  C23C16/458 ,  H01L21/02 ,  H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  H01L29/792 ,  H01L21/67

CPC分类号： H01L21/306 ,  C23C16/4585 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/67069 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.

摘要翻译： 根据本发明的一个实施例的用于制造具有垂直结构的存储器件的方法包括：在衬底上交替层叠一个或多个绝缘层和一个或多个牺牲层的步骤; 形成用于穿透绝缘层和牺牲层的穿透孔的步骤; 形成填充贯通孔的图案的工序; 用于形成用于穿透绝缘层和牺牲层的开口的步骤; 以及通过向所述开口供给蚀刻剂来除去所述牺牲层的步骤，其中所述层叠所述绝缘层的步骤包括通过向所述基板供给至少一种选自SiH 4的气体来沉积第一氧化硅膜的步骤 Si 2 H 6，Si 3 H 8，Si 4 H 10，层叠牺牲层的步骤包括通过向衬底提供二氯硅烷（SiCl 2 H 2）而沉积第二氧化硅膜的步骤。

公开(公告)号：US09396954B2

公开(公告)日：2016-07-19

申请号：US13823131

申请日：2011-10-06

申请人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

发明人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

IPC分类号： H01L21/306 ,  C23C16/458 ,  H01L21/02 ,  H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  H01L29/792

CPC分类号： H01L21/306 ,  C23C16/4585 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/31111 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.

摘要翻译： 提供一种制造具有三维结构的存储器件的方法，其包括在衬底上交替堆叠一个或多个电介质层和一个或多个牺牲层，形成通过电介质层和牺牲层的通孔，形成 填充通孔的图案，形成穿过电介质层和牺牲层的开口，以及通过开口提供蚀刻剂以除去牺牲层。 电介质层的堆叠包括向衬底供给选自由SiH 4，Si 2 H 6，Si 3 H 8和Si 4 H 10组成的组中的一种或多种气体，以沉积氧化硅层。 牺牲层的堆叠包括向基板供应一种或多种选自SiH 4，Si 2 H 6，Si 3 H 8，Si 4 H 10和二氯硅烷（SiCl 2 H 2）的气体和氨基气体，以沉积氮化硅层。

公开(公告)号：US20130171827A1

公开(公告)日：2013-07-04

申请号：US13822416

申请日：2011-10-06

申请人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

发明人： Sung Kil Cho ,  Hai Won Kim ,  Sang Ho Woo ,  Seung Woo Shin ,  Gil Sun Jang ,  Wan Suk Oh

IPC分类号： H01L21/306 ,  H01L21/67

CPC分类号： H01L21/306 ,  C23C16/4585 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/67069 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.

摘要翻译： 根据本发明的一个实施例的用于制造具有垂直结构的存储器件的方法包括：在衬底上交替层叠一个或多个绝缘层和一个或多个牺牲层的步骤; 形成用于穿透绝缘层和牺牲层的穿透孔的步骤; 形成填充贯通孔的图案的工序; 用于形成用于穿透绝缘层和牺牲层的开口的步骤; 以及通过向所述开口供给蚀刻剂来除去所述牺牲层的步骤，其中所述层叠所述绝缘层的步骤包括通过向所述基板供给至少一种选自SiH 4的气体来沉积第一氧化硅膜的步骤 Si 2 H 6，Si 3 H 8，Si 4 H 10，层叠牺牲层的步骤包括通过向衬底提供二氯硅烷（SiCl 2 H 2）而沉积第二氧化硅膜的步骤。

公开(公告)号：US20120160419A1

公开(公告)日：2012-06-28

申请号：US13375403

申请日：2010-04-12

申请人： Dong-Keun Lee ,  Sergey Zaretskiy ,  Sung Tae Je ,  Wan Suk Oh

发明人： Dong-Keun Lee ,  Sergey Zaretskiy ,  Sung Tae Je ,  Wan Suk Oh

IPC分类号： B05C13/02 ,  H01L21/683 ,  B23Q3/00 ,  C23C16/46

CPC分类号： C23C14/541 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/68735

摘要： A substrate-supporting unit includes: a mounting board on which a substrate is disposed; and a heater installed in the mounting board to heat the substrate disposed on the mounting board, wherein the mounting board includes: a non-contact surface which faces a center portion of the substrate and is spaced apart from the center portion of the substrate; and a contact member which extends outward from the non-contact surface and is arranged along an edge portion of the substrate disposed on the mounting board to support the edge portion of the substrate.

摘要翻译： 基板支撑单元包括：安装基板，其上设置有基板; 以及加热器，其安装在所述安装板中以加热设置在所述安装板上的所述基板，其中所述安装板包括：面对所述基板的中心部分并且与所述基板的中心部分间隔开的非接触表面; 以及从非接触表面向外延伸并且沿着设置在安装板上的基板的边缘部分布置以支撑基板的边缘部分的接触构件。