公开(公告)号：US20120160419A1

公开(公告)日：2012-06-28

申请号：US13375403

申请日：2010-04-12

申请人： Dong-Keun Lee ,  Sergey Zaretskiy ,  Sung Tae Je ,  Wan Suk Oh

发明人： Dong-Keun Lee ,  Sergey Zaretskiy ,  Sung Tae Je ,  Wan Suk Oh

IPC分类号： B05C13/02 ,  H01L21/683 ,  B23Q3/00 ,  C23C16/46

CPC分类号： C23C14/541 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/68735

摘要： A substrate-supporting unit includes: a mounting board on which a substrate is disposed; and a heater installed in the mounting board to heat the substrate disposed on the mounting board, wherein the mounting board includes: a non-contact surface which faces a center portion of the substrate and is spaced apart from the center portion of the substrate; and a contact member which extends outward from the non-contact surface and is arranged along an edge portion of the substrate disposed on the mounting board to support the edge portion of the substrate.

摘要翻译： 基板支撑单元包括：安装基板，其上设置有基板; 以及加热器，其安装在所述安装板中以加热设置在所述安装板上的所述基板，其中所述安装板包括：面对所述基板的中心部分并且与所述基板的中心部分间隔开的非接触表面; 以及从非接触表面向外延伸并且沿着设置在安装板上的基板的边缘部分布置以支撑基板的边缘部分的接触构件。

公开(公告)号：US20110028001A1

公开(公告)日：2011-02-03

申请号：US12934419

申请日：2009-03-27

申请人： Sung-Tae Je ,  Il-Kwang Yang ,  Chan-Yong Park

发明人： Sung-Tae Je ,  Il-Kwang Yang ,  Chan-Yong Park

IPC分类号： H01L21/46

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

摘要翻译： 公开了一种基板处理装置和方法。 基板处理装置包括提供内部空间的处理室（10），其中进行到基板上的处理; 安装在所述处理室（10）中以支撑所述基板的支撑构件（30） 以及位于所述支撑构件（30）上方以朝向所述支撑构件（30）供应源气体的淋浴喷头（20），其中所述喷淋头（20）包括位于与所述支撑构件（30）分离的位置的第一喷射表面（24） 衬底的上表面第一距离，并且设置有用于喷射源气体的第一喷射孔（24a）的出口; 以及第二注入表面（26），其位于与所述基板的上表面隔开第二距离与所述第一距离不同的位置处，并且设置有用于喷射所述源气体的第二喷射孔（26a）的出口。

公开(公告)号：US09416451B2

公开(公告)日：2016-08-16

申请号：US13822434

申请日：2011-10-06

申请人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

发明人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

IPC分类号： C23C16/50 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/507 ,  H01L21/321 ,  C23C16/44 ,  H05H1/46

CPC分类号： C23C16/50 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32449 ,  H01L21/02617 ,  H01L21/32105 ,  H01L21/3211 ,  H05H1/46 ,  H05H2001/4667

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及设置在该室的上部中的天线，以形成 室内的电场。 天线包括相对于预设中心旋转对称地设置的第一天线和第二天线。 第一天线包括分别具有半圆形和第一和第二半径的第一内天线和第一中间天线，并且分别设置在相对于预设中心线的一侧和另一侧上，第一连接天线将第 第一内天线到第一中间天线。 第二天线包括分别具有半圆形并且具有第一和第二半径并且分别相对于中心线设置在一侧和另一侧的第二中间天线和第二内天线，以及连接第二天线 第二中间天线到第二内部天线。

公开(公告)号：US20130149078A1

公开(公告)日：2013-06-13

申请号：US13813985

申请日：2011-08-30

申请人： Sung Tae Je ,  Il Kwang Yang ,  Jun Jin Hyon

发明人： Sung Tae Je ,  Il Kwang Yang ,  Jun Jin Hyon

IPC分类号： H01L21/677

CPC分类号： H01L21/677 ,  H01L21/67745 ,  H01L21/68742

摘要： According to one embodiment of the present invention, a substrate-processing apparatus includes: first and second chambers parallel to each other; a plurality of first lift pins disposed in the first chamber, and supporting a first substrate transferred to the first chamber; a plurality of second lift pins disposed in the second chamber, and supporting a second substrate transferred into the second chamber; and a transfer robot transferring the first and second substrates into the first and second chambers. The transfer robot includes first and second blades that simultaneously elevate to transfer the first and second substrates to the upper sides of the first and second lift pins, respectively. The first and second blades can move to: a moving position higher than the upper ends of the first and second lift pins; a first loading position in which the first blade is lower than the upper ends of the first lift pins and the second blade is higher than the upper ends of the second lift pins; and a second loading position in which the first and second blades are lower than the upper ends of the first and second lift pins.

摘要翻译： 根据本发明的一个实施例，一种基板处理装置包括：彼此平行的第一和第二腔; 设置在所述第一室中的多个第一提升销，并且支撑转移到所述第一室的第一基板; 多个第二提升销，设置在所述第二室中，并且支撑转移到所述第二室中的第二基板; 以及将第一和第二基板转移到第一和第二室中的传送机器人。 传送机器人包括分别同时提升以将第一和第二基板分别传送到第一和第二提升销的上侧的第一和第二叶片。 第一和第二叶片可以移动到：比第一和第二提升销的上端高的移动位置; 其中所述第一叶片低于所述第一提升销和所述第二叶片的上端的第一装载位置高于所述第二提升销的上端; 以及第二装载位置，其中第一和第二叶片比第一和第二提升销的上端低。

公开(公告)号：US08771418B2

公开(公告)日：2014-07-08

申请号：US13382812

申请日：2010-07-02

申请人： Sung Tae Je ,  Chan Yong Park ,  Kyoung Hun Kim

发明人： Sung Tae Je ,  Chan Yong Park ,  Kyoung Hun Kim

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565

摘要： According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port. The diffusion unit includes: a plurality of diffusion areas which are blocked from each other, in order to enable the reaction gas to be diffused therein; a plurality of diffusion holes for placing the gas supply port and the diffusion areas in communication; and one or more diffusion plates, the shapes of which correspond to the shapes of the diffusion areas, and which are selectively inserted into the respective diffusion areas.

摘要翻译： 根据本发明的一个实施例，一种基板处理装置包括：具有开口顶部的下室; 上室，其覆盖下室的顶部，并与下腔室配合以形成用于衬底处理的内部空间; 淋浴头，其布置在所述上​​部腔室的下部，以将反应气体供应到所述内部空间;以及在所述淋浴喷头和所述上部腔室之间形成缓冲空间; 形成在上部室中的气体供给口，用于向缓冲空间供给反应气体; 以及布置在所述缓冲空间中的扩散单元，用于扩散通过所述气体供给口供给的反应气体。 扩散单元包括：多个彼此被阻挡的扩散区域，以使反应气体能够在其中扩散; 多个用于将气体供给口和扩散区域连通的扩散孔; 以及一个或多个扩散板，其形状对应于扩散区域的形状，并且被选择性地插入到相应的扩散区域中。

公开(公告)号：US08528499B2

公开(公告)日：2013-09-10

申请号：US12934419

申请日：2009-03-27

申请人： Sung-Tae Je ,  Il-Kwang Yang ,  Chan-Yong Park

发明人： Sung-Tae Je ,  Il-Kwang Yang ,  Chan-Yong Park

IPC分类号： C23C16/00 ,  C23C16/50

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

摘要翻译： 公开了一种基板处理装置和方法。 基板处理装置包括提供内部空间的处理室（10），其中进行到基板上的处理; 安装在所述处理室（10）中以支撑所述基板的支撑构件（30） 以及位于所述支撑构件（30）上方以朝向所述支撑构件（30）供应源气体的淋浴喷头（20），其中所述喷淋头（20）包括位于与所述支撑构件（30）分离的位置的第一喷射表面（24） 衬底的上表面第一距离，并且设置有用于喷射源气体的第一喷射孔（24a）的出口; 以及第二注入表面（26），其位于与所述基板的上表面隔开第二距离与所述第一距离不同的位置处，并且设置有用于喷射所述源气体的第二喷射孔（26a）的出口。

公开(公告)号：US20130180453A1

公开(公告)日：2013-07-18

申请号：US13822434

申请日：2011-10-06

申请人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

发明人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

IPC分类号： C23C16/50

CPC分类号： C23C16/50 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/32449 ,  H01L21/02617 ,  H01L21/32105 ,  H01L21/3211 ,  H05H1/46 ,  H05H2001/4667

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及设置在该室的上部中的天线，以形成 室内的电场。 天线包括相对于预设中心旋转对称地设置的第一天线和第二天线。 第一天线包括分别具有半圆形和第一和第二半径的第一内天线和第一中间天线，并且分别设置在相对于预设中心线的一侧和另一侧上，第一连接天线将第 第一内天线到第一中间天线。 第二天线包括分别具有半圆形并且具有第一和第二半径并且分别相对于中心线设置在一侧和另一侧的第二中间天线和第二内天线，以及连接第二天线 第二中间天线到第二内天线。

公开(公告)号：US20100319855A1

公开(公告)日：2010-12-23

申请号：US12865373

申请日：2009-02-03

申请人： Dong-Keun Lee ,  Kyung-Jin Chu ,  Sung-Tae Je ,  Il-Kwang Yang

发明人： Dong-Keun Lee ,  Kyung-Jin Chu ,  Sung-Tae Je ,  Il-Kwang Yang

IPC分类号： C23F1/08 ,  B05C13/00 ,  C23C16/00 ,  B23P11/00

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  Y10T29/49826

摘要： Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor (12) provided with heaters (15a, 16b) to heat a substrate placed on the susceptor (12), and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member (20) including a contact surface (21) being in thermal contact with the second temperature region. The heat dissipating member (20) further includes an opening (23) corresponding to the first temperature region. The heat dissipating member (20) formed in a ring shape, in which the opening (23) is surrounded with the contact surface (21), and the contact surface (21) of the heat dissipating member (20) makes thermal contact with the lower surface of the susceptor (12).

摘要翻译： 公开了基板支撑单元，基板处理装置和制造基板支撑单元的方法。 基板支撑单元包括设置有加热器（15a，16b）的基座（12），用于加热放置在基座（12）上的基板，并且包括第一温度区域和具有比第一温度高的温度的第二温度区域 温度区; 和散热构件（20），其包括与第二温度区域热接触的接触表面（21）。 散热构件（20）还包括对应于第一温度区域的开口（23）。 形成为环状的散热构件（20），其中开口（23）被接触表面（21）包围，并且散热构件（20）的接触表面（21）与所述散热构件 基座（12）的下表面。

公开(公告)号：US20130186337A1

公开(公告)日：2013-07-25

申请号：US13822121

申请日：2011-10-06

申请人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

发明人： Sung Tae Je ,  Il Kwang Yang ,  Byung Gyu Song ,  Song Hwan Park

IPC分类号： H01L21/02

CPC分类号： H01L21/02617 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/32449 ,  H01L21/32105 ,  H01L21/3211

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括：进行相对于基板的处理的室，其上放置基板的基板支撑件，设置在该室内的基板支撑件，以及喷头，其中将用于将反应气体供应到 室和用于排出供应到室中的反应气体的出口对称地布置。 反应气体在室内沿与基板大致平行的方向流动。

公开(公告)号：US20120135145A1

公开(公告)日：2012-05-31

申请号：US13382812

申请日：2010-07-02

申请人： Sung Tae Je ,  Chan Yong Park ,  Kyoung Hun Kim

发明人： Sung Tae Je ,  Chan Yong Park ,  Kyoung Hun Kim

IPC分类号： C23C16/455

CPC分类号： C23C16/45565

摘要： According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port. The diffusion unit includes: a plurality of diffusion areas which are blocked from each other, in order to enable the reaction gas to be diffused therein; a plurality of diffusion holes for placing the gas supply port and the diffusion areas in communication; and one or more diffusion plates, the shapes of which correspond to the shapes of the diffusion areas, and which are selectively inserted into the respective diffusion areas.

摘要翻译： 根据本发明的一个实施例，一种基板处理装置包括：具有开口顶部的下室; 上室，其覆盖下室的顶部，并与下腔室配合以形成用于衬底处理的内部空间; 淋浴头，其布置在所述上​​部腔室的下部，以将反应气体供应到所述内部空间;以及在所述淋浴喷头和所述上部腔室之间形成缓冲空间; 形成在上部室中的气体供给口，用于向缓冲空间供给反应气体; 以及布置在所述缓冲空间中的扩散单元，用于扩散通过所述气体供给口供给的反应气体。 扩散单元包括：多个彼此被阻挡的扩散区域，以使反应气体能够在其中扩散; 多个用于将气体供给口和扩散区域连通的扩散孔; 以及一个或多个扩散板，其形状对应于扩散区域的形状，并且被选择性地插入到相应的扩散区域中。