公开(公告)号：US20120086017A1

公开(公告)日：2012-04-12

申请号：US13327647

申请日：2011-12-15

申请人： Sung Min HWANG ,  Kwang Hyeon BAIK ,  Yong Gon SEO ,  Hyung Do YOON ,  Jae Hyoun PARK

发明人： Sung Min HWANG ,  Kwang Hyeon BAIK ,  Yong Gon SEO ,  Hyung Do YOON ,  Jae Hyoun PARK

IPC分类号： H01L29/22 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/22

摘要： Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

摘要翻译： 提供了异质衬底，使用其的氮化物基半导体器件及其制造方法，以在非均相衬底的非极性或半极性平面上形成高质量非极性或半极性氮化物层 通过调整晶体生长模式。 准备具有非极性面和半极性面之一的基底基板，在基底基板的平面上形成氮化物系成核层。 第一缓冲层在垂直方向上比在成核层上的横向方向上生长得更快。 横向生长层在横向上比在第一缓冲层上比垂直方向上生长得更快。 在侧生长层上形成第二缓冲层。 可以在第一缓冲层上的横向生长层和第二缓冲层之间形成具有多个孔的氮化硅层。