公开(公告)号：US20130074607A1

公开(公告)日：2013-03-28

申请号：US13241132

申请日：2011-09-22

Applicant: Sung Ryol JIN ,  Yong Hyun LEE

Inventor： Sung Ryol JIN ,  Yong Hyun LEE

IPC: G01N3/20

CPC classification number: G01N3/20 ,  G01N2033/0088

Abstract: A novel RFID tag-bending test apparatus and a related method of using the novel RFID tag-bending test apparatus are disclosed. In one embodiment of the invention, the novel RFID tag-bending test apparatus can place a plurality of RFID tags in corresponding tag holding clips on the novel RFID tag-bending test apparatus to execute a bending test sequence along a particular bending axis for each RFID tag. The bending test sequence can assist identifying defective RFID tags which cannot overcome external bending pressures asserted by the novel RFID tag-bending test apparatus. By excluding these defective RFID tags from a commercial shipment of RFID tags to customers, a manufacturer of RFID tags may be able to reduce a rate of premature RFID tag failures due to external bending pressures in real-life applications of RFID tags, thereby achieving a higher quality assurance and reliability of RFID tags.

Abstract translation: 公开了一种使用该RFID标签弯曲试验装置的新型RFID标签弯曲试验装置及其相关方法。 在本发明的一个实施例中，新型RFID标签弯曲测试装置可以将多个RFID标签放置在新的RFID标签弯曲测试装置上的相应的标签保持夹中，以对每个RFID执行沿着特定弯曲轴的弯曲测试序列 标签。 弯曲测试序列可以帮助识别不能克服由新型RFID标签弯曲测试装置声称的外部弯曲压力的有缺陷的RFID标签。 通过将这些有缺陷的RFID标签从商业运送的RFID标签中排除给客户，RFID标签的制造商可能能够降低由于RFID标签的现实生活应用中的外部弯曲压力引起的过早的RFID标签失效的速率，从而实现 更高的RFID标签质量保证和可靠性。

公开(公告)号：US20130284858A1

公开(公告)日：2013-10-31

申请号：US13845875

申请日：2013-03-18

Applicant: Ki Ju KANG ,  Yong Hyun LEE

Inventor： Ki Ju KANG ,  Yong Hyun LEE

IPC: B21F27/00

CPC classification number: E04B1/19 ,  B21F3/02 ,  B21F27/005 ,  B21F27/12 ,  D03D25/005

Abstract: A three-dimensional cellular light structure formed of continuous wire groups. For example, six orientational helical wire groups are intercrossed in a three-dimensional space and form a uniform pattern. In a manufacturing method, a frame assembly of rectangular frames and connection support bars is used. The method includes arranging and fixing first axis wires on the frames, connecting the frames by connection support bars, and assembling second axis wires to make a three-dimensional cellular light structure. The intersection points of the wires may be bonded. It can be a fiber-reinforced composite material by filling at least part of an internal empty space of the structure.

Abstract translation: 由连续线组形成的三维蜂窝光结构。 例如，六个取向螺旋线组在三维空间中交叉并形成均匀的图案。 在制造方法中，使用矩形框架和连接支撑杆的框架组件。 该方法包括在框架上布置和固定第一轴线，通过连接支撑杆连接框架，以及组装第二轴线以制成三维蜂窝光结构。 电线的交点可以结合。 它可以是通过填充结构的内部空间的至少一部分的纤维增强复合材料。

公开(公告)号：US20100136736A1

公开(公告)日：2010-06-03

申请号：US12628215

申请日：2009-12-01

Applicant: Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

Inventor： Chang Ho LEE ,  Hyung Dong KANG ,  Hyun Ho LEE ,  Yong Hyun LEE ,  Seon Myung KIM

IPC: H01L31/18

CPC classification number: H01L31/075 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.

Abstract translation: 公开了一种制造薄膜型太阳能电池的方法，其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化，这是由于成分气体的最佳含量比，最佳 在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度，所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型，I型和N型半导体层; 以及在所述N型半导体层上形成后电极层，其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层， 例如，含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。

公开(公告)号：US20150083331A1

公开(公告)日：2015-03-26

申请号：US14556008

申请日：2014-11-28

Applicant: Yong Hyun LEE ,  Myung Jin LEE ,  An Ki CHA

Inventor： Yong Hyun LEE ,  Myung Jin LEE ,  An Ki CHA

IPC: H01L21/677 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01L21/67739 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32899 ,  H01L21/306 ,  H01L21/67742 ,  H01L21/67745

Abstract: Disclosed herein is a semiconductor manufacturing apparatus including a transfer chamber provided with a substrate moving device to move substrates, a load lock chamber to align the substrates and to load and unload the substrates into and out of the transfer chamber, and at least one process chamber to process the substrates transferred from the transfer chambers. Each of the at least one process chamber includes a chamber provided with a substrate entrance formed on a side surface thereof, a substrate support provided within the chamber such that at least two substrates are disposed on the substrate support, and at least one divider provided within the chamber to align the at least two substrates.

Abstract translation: 本文公开了一种半导体制造装置，包括：传送室，设置有用于移动基板的基板移动装置;负载锁定室，其对准基板并将基板装载和卸载到输送室中;以及至少一个处理室 以处理从转印室转印的基材。 所述至少一个处理室中的每一个包括设置有形成在其侧表面上的基板入口的室，设置在所述室内的基板支撑件，使得至少两个基板设置在所述基板支撑件上， 所述腔室对准所述至少两个基板。