公开(公告)号：US08563978B2

公开(公告)日：2013-10-22

申请号：US13084741

申请日：2011-04-12

申请人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

发明人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC分类号： H01L33/08

CPC分类号： H01L51/0023 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/5203 ,  H01L2227/323

摘要： A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

公开(公告)号：US20110303921A1

公开(公告)日：2011-12-15

申请号：US13084741

申请日：2011-04-12

申请人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

发明人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC分类号： H01L33/08 ,  H01L33/16

CPC分类号： H01L51/0023 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/5203 ,  H01L2227/323

摘要： A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

摘要翻译： 显示装置包括基板，在基板上包括栅电极和第一电容器电极的第一导电膜图案，第一导电膜图案上的栅极绝缘层图案，包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极，多晶硅膜图案上的层间绝缘层，穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层，以暴露第一导电膜图案的一部分，多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分，以及在层间绝缘层上包括源电极，漏电极和像素电极的第二导电膜图案。

公开(公告)号：US08716040B2

公开(公告)日：2014-05-06

申请号：US13113279

申请日：2011-05-23

申请人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

发明人： Min-Chul Shin ,  Jong-Moo Huh ,  Bong-Ju Kim ,  Yun-Gyu Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/1288 ,  H01L27/3248

摘要： An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

摘要翻译： 一种有机发光二极管（OLED）显示器及其制造方法，所述OLED显示器包括：基板主体; 包括形成在所述基板主体上的多晶有源层和第一电容器电极的多晶硅层图案; 形成在所述多晶硅层图案上的栅极绝缘层图案; 形成在所述栅极绝缘层图案上的包括栅电极和第二电容电极的第一导电层图案; 形成在所述第一导电层图案上的层间绝缘层图案; 以及包括形成在层间绝缘层图案上的源电极，漏电极和像素电极的第二导电层图案。 栅极绝缘层图案与多晶硅层图案和第一导电层图案中的任一个同时被图案化。

公开(公告)号：US20120301985A1

公开(公告)日：2012-11-29

申请号：US13449068

申请日：2012-04-17

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L21/336 ,  H01L33/16

CPC分类号： H01L27/3258 ,  H01L27/1285 ,  H01L51/5209

摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.

摘要翻译： 一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。 在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。 然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

公开(公告)号：US09153793B2

公开(公告)日：2015-10-06

申请号：US13330477

申请日：2011-12-19

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L51/52 ,  H01L27/32

CPC分类号： H01L51/5271 ,  H01L27/3244

摘要： In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer.

摘要翻译： 在用于提高图像质量的有机发光显示装置及其制造方法中，有机发光显示装置包括基板，设置在基板上的第一电极，设置在第一电极上的中间层， 有机发光层，设置在中间层上的第二电极以及设置在中间层附近并反射从中间层发射的可见光的反射单元。

公开(公告)号：US20120267629A1

公开(公告)日：2012-10-25

申请号：US13330477

申请日：2011-12-19

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L33/08

CPC分类号： H01L51/5271 ,  H01L27/3244

摘要： In an organic light-emitting display apparatus for improving image quality and a method of manufacturing the same, the organic light-emitting display apparatus comprises a substrate, a first electrode disposed on the substrate, an intermediate layer disposed on the first electrode and including an organic emission layer, a second electrode disposed on the intermediate layer, and a reflective unit disposed near the intermediate layer and reflecting visible light emitted from the intermediate layer.

摘要翻译： 在用于提高图像质量的有机发光显示装置及其制造方法中，有机发光显示装置包括基板，设置在基板上的第一电极，设置在第一电极上的中间层， 有机发光层，设置在中间层上的第二电极，以及设置在中间层附近并反射从中间层发射的可见光的反射单元。

公开(公告)号：US08507331B2

公开(公告)日：2013-08-13

申请号：US13449068

申请日：2012-04-17

申请人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

发明人： Min-Chul Shin ,  Do-Young Kim ,  Yun-Gyu Lee ,  Jong-Moo Huh

IPC分类号： H01L21/00

CPC分类号： H01L27/3258 ,  H01L27/1285 ,  H01L51/5209

摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.

摘要翻译： 一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。 在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。 然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

公开(公告)号：US08551827B2

公开(公告)日：2013-10-08

申请号：US13771656

申请日：2013-02-20

申请人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

发明人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/1251 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262

摘要： An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

摘要翻译： 一种有机发光二极管显示装置及其制造方法，所述装置包括基板，所述基板包括像素部分和电路部分; 在所述基板的像素部分上的第一半导体层和第二半导体层; 在所述基板的整个表面上的栅极绝缘层; 栅绝缘层上的栅电极，分别对应于第一半导体层和第二半导体层的栅电极; 与栅电极绝缘的源/漏电极，源/漏电极分别连接到第一和第二半导体层; 连接到第一半导体层的源极/漏极的第一电极; 第一电极上的有机层; 有机层上的第二层; 以及在第一半导体层下面的金属催化剂层。

公开(公告)号：US08389984B2

公开(公告)日：2013-03-05

申请号：US12926518

申请日：2010-11-23

申请人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

发明人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1251 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262

摘要： An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

摘要翻译： 一种有机发光二极管显示装置及其制造方法，所述装置包括基板，所述基板包括像素部分和电路部分; 在所述基板的像素部分上的第一半导体层和第二半导体层; 在所述基板的整个表面上的栅极绝缘层; 栅绝缘层上的栅电极，分别对应于第一半导体层和第二半导体层的栅电极; 与栅电极绝缘的源/漏电极，源/漏电极分别连接到第一和第二半导体层; 连接到第一半导体层的源极/漏极的第一电极; 第一电极上的有机层; 有机层上的第二层; 以及在第一半导体层下面的金属催化剂层。

公开(公告)号：US20110186842A1

公开(公告)日：2011-08-04

申请号：US12926861

申请日：2010-12-14

申请人： Sang-Ho Moon ,  Kyu-Sik Cho ,  Won-Kyu Lee ,  Tae-Hoon Yang ,  Byoung-Kwon Choo ,  Yong-Hwan Park ,  Bo-Kyung Choi ,  Joon-Hoo Choi ,  Yun-Gyu Lee ,  Min-Chul Shin

发明人： Sang-Ho Moon ,  Kyu-Sik Cho ,  Won-Kyu Lee ,  Tae-Hoon Yang ,  Byoung-Kwon Choo ,  Yong-Hwan Park ,  Bo-Kyung Choi ,  Joon-Hoo Choi ,  Yun-Gyu Lee ,  Min-Chul Shin

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/786

摘要： A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer.

摘要翻译： 一种制造薄膜晶体管和薄膜晶体管的方法，所述方法包括在具有栅电极的基板的整个顶表面上顺序地形成栅极绝缘层，非晶硅层和绝缘层; 图案化绝缘层以形成蚀刻停止层; 以及图案化所述非晶硅层以形成半导体层。