公开(公告)号：US06242111B1

公开(公告)日：2001-06-05

申请号：US08119444

申请日：1993-09-08

申请人： Susan G. Telford ,  Craig Bercaw

发明人： Susan G. Telford ,  Craig Bercaw

IPC分类号： C25D1102

CPC分类号： C25D11/16 ,  C25D11/10 ,  H01L21/68757 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/1259 ,  Y10T428/12764 ,  H01L2924/00

摘要： Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably comprises selecting a high purity or low magnesium aluminum alloy, roughening the surface of the alloy, and then anodizing the surface roughened alloy in an electrolyte comprising an organic acid to form the desired anodized aluminum oxide coating thereon. Further, the invention comprises a high purity or low magnesium aluminum alloy susceptor and an organic acid anodic coating thereon highly resistant to spalling or cracking at elevated temperatures.

摘要翻译： 公开了一种制造阳极氧化铝基座的方法，该阳极氧化铝基座能够在不存在剥离或开裂的情况下耐受590℃的高温或高达475℃的温度，而不会剥离或开裂，优选包括选择 高纯度或低镁铝合金，使合金的表面粗糙化，然后在包含有机酸的电解质中阳极氧化表面粗糙合金，以在其上形成所需的阳极化氧化铝涂层。 此外，本发明包括高纯度或低镁铝合金基座和其上的有机酸阳极涂层，其高度耐高温下的剥落或开裂。

公开(公告)号：US5643633A

公开(公告)日：1997-07-01

申请号：US485925

申请日：1995-06-07

申请人： Susan G. Telford ,  Meng Chu Tseng ,  Michio Aruga ,  Moshe Eizenberg

发明人： Susan G. Telford ,  Meng Chu Tseng ,  Michio Aruga ,  Moshe Eizenberg

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/42 ,  C23C16/4405 ,  C23C16/45512 ,  C23C16/45561 ,  Y10S148/019 ,  Y10S148/027

摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

摘要翻译： 从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。 可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。 优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。 可以在工艺气体中加入接种气体。

公开(公告)号：US05997950A

公开(公告)日：1999-12-07

申请号：US863676

申请日：1997-05-27

申请人： Susan G. Telford ,  Meng Chu Tseng ,  Michio Aruga ,  Klaus-Dieter Rinnen

发明人： Susan G. Telford ,  Meng Chu Tseng ,  Michio Aruga ,  Klaus-Dieter Rinnen

IPC分类号： C23C16/42

CPC分类号： C23C16/45561 ,  C23C16/42

摘要： A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.

摘要翻译： 从预混合的沉积气体混合物将硅化钨膜沉积在衬底上，包括：（i）硅源气体，例如SiCl 2 H 2和（ii）钨源气体，例如WF 6。 在初始沉积阶段期间使用接种气体，例如硅烷，以在基底上沉积基本上均匀的界面WSix层，使得WSix层的钨与硅的比例通过WSix膜的厚度基本上是均匀的。 还描述了用于执行该处理的装置。

公开(公告)号：US5500249A

公开(公告)日：1996-03-19

申请号：US64328

申请日：1993-05-18

申请人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga

发明人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/42 ,  C23C16/4405 ,  C23C16/45561 ,  Y10S148/019 ,  Y10S148/027

摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

公开(公告)号：US5558910A

公开(公告)日：1996-09-24

申请号：US477836

申请日：1995-06-07

申请人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga ,  Moshe Eizenberg

发明人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga ,  Moshe Eizenberg

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/42 ,  C23C16/4405 ,  C23C16/45512 ,  C23C16/45561 ,  Y10S148/019 ,  Y10S148/027

摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

摘要翻译： 从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。 可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。 优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。 可以在工艺气体中加入接种气体。