公开(公告)号：US5558910A

公开(公告)日：1996-09-24

申请号：US477836

申请日：1995-06-07

申请人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga ,  Moshe Eizenberg

发明人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga ,  Moshe Eizenberg

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/42 ,  C23C16/4405 ,  C23C16/45512 ,  C23C16/45561 ,  Y10S148/019 ,  Y10S148/027

摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

摘要翻译： 从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。 可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。 优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。 可以在工艺气体中加入接种气体。

公开(公告)号：US5500249A

公开(公告)日：1996-03-19

申请号：US64328

申请日：1993-05-18

申请人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga

发明人： Susan G. Telford ,  Meng C. Tseng ,  Michio Aruga

IPC分类号： C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/42 ,  C23C16/4405 ,  C23C16/45561 ,  Y10S148/019 ,  Y10S148/027

摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

公开(公告)号：US5565382A

公开(公告)日：1996-10-15

申请号：US135202

申请日：1993-10-12

申请人： Meng C. Tseng ,  Susan Telford ,  Mei Chang

发明人： Meng C. Tseng ,  Susan Telford ,  Mei Chang

IPC分类号： C01G41/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/285

CPC分类号： C23C16/45565 ,  C23C16/42 ,  C23C16/45502 ,  C23C16/45591 ,  C23C16/4583 ,  C30B25/02 ,  C30B29/10

摘要： A process and is described for forming a tungsten silicide layer on a semiconductor wafer in a deposition chamber which comprises mounting a wafer on a susceptor having a fixed outer diameter regardless of the diameter wafer thereon to be processed in said chamber, and flowing into a deposition chamber a mixture of gases, including dichlorosilane gas and a gaseous source of tungsten through a fixed gas inlet pattern formed in a fixed diameter inlet receptacle, whereby a constant gas flow will be maintained in the deposition chamber regardless of wafer diameter being processed to thereby provide uniform deposition conditions in the deposition chamber, independent of wafer diameter. In this manner the same showerhead is used for all diameters of wafers, and while the susceptor is changed with each size of wafer to be processed, to thereby provide a crown pattern on the susceptor corresponding to the diameter of the wafer being processed, the same outer diameter is used for each susceptor, thereby providing the same dimensioned gap in the same position between the outer edge of the susceptor and a baffle plate surrounding the susceptor, so that the gas flow patterns in the deposition chamber remain constant during deposition, regardless of wafer diameter.

摘要翻译： 描述了用于在沉积室中在半导体晶片上形成硅化钨层的方法，该方法包括将晶片安装在具有固定外径的基座上，而不管其在所述室中待加工的直径晶片，而流入沉积物 通过形成在固定直径的入口容器中的固定气体入口图案，将包括二氯硅烷气体和钨的气体源的气体混合在一起，从而在沉积室中保持恒定的气流，而不管晶圆直径被加工，从而提供 沉积室中的均匀沉积条件，与晶片直径无关。 以这种方式，相同的喷头用于晶圆的所有直径，并且当基座随着要处理的每个晶片尺寸而改变时，从而在基座上提供对应于被处理的晶片的直径的冠状图案，相同 外径用于每个基座，从而在基座的外边缘和围绕基座的挡板之间的相同位置提供相同的尺寸的间隙，使得沉积室中的气流图案在沉积期间保持恒定，而不管 晶圆直径。

公开(公告)号：US5326725A

公开(公告)日：1994-07-05

申请号：US31259

申请日：1993-03-11

申请人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

发明人： Semyon Sherstinsky ,  Charles C. Harris ,  Mei Chang ,  Dale R. Du Bois ,  James F. Roberts ,  Susan Telford ,  Ronald L. Rose ,  Meng C. Tseng ,  Karl A. Littau

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A clamping ring having a downwardly extending finger that mates with a pocket in the periphery of a susceptor for supporting a wafer in a chemical vapor deposition chamber, provides alignment of the clamping ring, the wafer and the susceptor. A source of inert gas connected to the pocket provides a positive pressure in the pocket that prevents reactive gas in the chamber from reaching the edge and backside of the wafer. A source of vacuum connected to the susceptor support surface ensures good contact between the wafer and the susceptor.The clamping ring also has a lip extending over the top surface of the wafer having a rear surface that has a negative angle with respect to the upper surface of the clamping ring, providing a knife edge seal to the wafer, reducing the area of contact between the clamping ring and the wafer and providing a reduced area of thermal contact between the clamping ring and the wafer.

摘要翻译： 具有向下延伸的指状物的夹紧环，其与基座的周边中的口相配合，用于在化学气相沉积室中支撑晶片，提供夹紧环，晶片和基座的对准。 连接到口袋的惰性气体源在口袋中提供正压力，防止腔室中的反应性气体到达晶片的边缘和背面。 连接到基座支撑表面的真空源确保了晶片和基座之间良好的接触。 夹紧环还具有在晶片的顶表面上延伸的唇缘，其具有相对于夹紧环的上表面具有负角度的后表面，为晶片提供刀刃密封，从而减小了 夹紧环和晶片，并且在夹紧环和晶片之间提供减小的热接触面积。