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公开(公告)号:US09660330B2
公开(公告)日:2017-05-23
申请号:US13782520
申请日:2013-03-01
Applicant: TAI-SAW TECHNOLOGY CO., LTD
Inventor: Kuang-Ting Chi , Ken-Huang Lin , Yu-Tung Huang , Chi-Yun Chen
Abstract: The present invention provides to an antenna. The antenna includes a piezoelectric-substrate layer; and a quasi-fractal radiating layer disposed on the piezoelectric-substrate layer and having a quadrangle sub-structure and a similar structure that is formed by a nth-order self-similar iteration process including a trimming step, a scaling step and a combining step on the basis of the quadrangle sub-structure, where n is an integer greater than zero.
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公开(公告)号:US11784631B2
公开(公告)日:2023-10-10
申请号:US17691674
申请日:2022-03-10
Applicant: TAI-SAW Technology Co., Ltd.
Inventor: Chia-Haur Rau , Kun-Yu Huang , Chi-Yun Chen
CPC classification number: H03H9/19 , H03B5/32 , H10N30/872
Abstract: A resonance element supported by a bearing structure includes a crystal chip and an excitation electrode. The crystal chip includes a main surface having a support surface portion being in contact with the bearing structure. The excitation electrode is disposed on the main surface, has an electrode area, and includes an electrode indentation boundary partly encompassing the support surface portion. The electrode indentation boundary has a first boundary end and a second boundary end being opposite to the first boundary end. The electrode indentation boundary and a reference line segment defined by the first and the second boundary ends form an electrode indentation region having an indentation area. A ratio of the indentation area to the electrode area ranges from 0.05 to 0.2.
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公开(公告)号:US20130229311A1
公开(公告)日:2013-09-05
申请号:US13782520
申请日:2013-03-01
Applicant: TAI-SAW TECHNOLOGY CO., LTD
Inventor: Kuang-Ting Chi , Ken-Huang Lin , Yu-Tung Huang , Chi-Yun Chen
IPC: H01Q1/38
Abstract: The present invention provides to an antenna. The antenna includes a piezoelectric-substrate layer; and a quasi-fractal radiating layer disposed on the piezoelectric-substrate layer and having a quadrangle sub-structure and a similar structure that is formed by a nth-order self-similar iteration process including a trimming step, a scaling step and a combining step on the basis of the quadrangle sub-structure, where n is an integer greater than zero.
Abstract translation: 本发明提供一种天线。 天线包括压电基片层; 以及准分形放射层,其设置在所述压电基板层上并且具有通过包括修整步骤,缩放步骤和组合步骤的n阶自相似迭代处理形成的四边形子结构和类似结构 基于四边形子结构,其中n是大于零的整数。
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公开(公告)号:US11764756B2
公开(公告)日:2023-09-19
申请号:US17329788
申请日:2021-05-25
Applicant: TAI-SAW Technology Co., Ltd.
Inventor: Cheng-Kang Peng , Kun-Yu Huang , Chi-Yun Chen , Song Tian , Tsung-Pin Yang
Abstract: A crystal device includes a bearing base, an integrated chip and a conductive adhesive unit. The bearing base includes a conductive seat. The integrated chip includes a principal reference plane facing the conductive seat, and having a first major axis. The conductive adhesive unit has a second major axis and an aspect ratio, and is at least partly disposed between the conductive seat and the integrated chip. The aspect ratio ranges from 1.1 to 1.9. The principal reference plane further has a perpendicular projection straight line defined according to the second major axis. A practical angle is included by the first perpendicular projection straight line and the first major axis, and ranges from 0 degree to 90 degrees.
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公开(公告)号:US20210384888A1
公开(公告)日:2021-12-09
申请号:US17329788
申请日:2021-05-25
Applicant: TAI-SAW Technology Co., Ltd.
Inventor: Cheng-Kang Peng , Kun-Yu Huang , Chi-Yun Chen , Song Tian , Tsung-Pin Yang
Abstract: A crystal device includes a bearing base, an integrated chip and a conductive adhesive unit. The bearing base includes a conductive seat. The integrated chip includes a principal reference plane facing the conductive seat, and having a first major axis. The conductive adhesive unit has a second major axis and an aspect ratio, and is at least partly disposed between the conductive seat and the integrated chip. The aspect ratio ranges from 1.1 to 1.9. The principal reference plane further has a perpendicular projection straight line defined according to the second major axis. A practical angle is included by the first perpendicular projection straight line and the first major axis, and ranges from 0 degree to 90 degrees.
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公开(公告)号:US20220294419A1
公开(公告)日:2022-09-15
申请号:US17691674
申请日:2022-03-10
Applicant: TAI-SAW Technology Co., Ltd.
Inventor: Chia-Haur Rau , Kun-Yu Huang , Chi-Yun Chen
IPC: H03H9/19 , H01L41/047 , H03B5/32
Abstract: A resonance element supported by a bearing structure includes a crystal chip and an excitation electrode. The crystal chip includes a main surface having a support surface portion being in contact with the bearing structure. The excitation electrode is disposed on the main surface, has an electrode area, and includes an electrode indentation boundary partly encompassing the support surface portion. The electrode indentation boundary has a first boundary end and a second boundary end being opposite to the first boundary end. The electrode indentation boundary and a reference line segment defined by the first and the second boundary ends form an electrode indentation region having an indentation area. A ratio of the indentation area to the electrode area ranges from 0.05 to 0.2.
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