公开(公告)号：US20180347029A1

公开(公告)日：2018-12-06

申请号：US15774590

申请日：2016-01-06

Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

Inventor： HENG YANG ,  WEILONG YOU ,  LEI ZHANG ,  XIAOFEI WANG ,  XINXIN LI

IPC: C23C14/24 ,  H03H9/24 ,  H03B1/02 ,  H01L21/02

CPC classification number: H01L21/203 ,  H03H9/24

Abstract: The present invention provides a micro evaporator, an oscillator integrated micro evaporator structure and a frequency correction method thereof. The micro evaporator comprises a micro evaporation platform, anchor points, supporting beams and metal electrodes, wherein one surface of the micro evaporation platform is an evaporation surface; the anchor points are located on two sides of the micro evaporation platform and have a certain distance to the micro evaporation platform; the supporting beams are located between the micro evaporation platform and the anchor points, one end of each supporting beam is connected with the micro evaporation platform and the other end is connected with the anchor point; the size of each supporting beam satisfies the following relation: T=P(L/2kbh)+Ta; and the metal electrodes are located on first surfaces of the anchor points.

公开(公告)号：US10062494B2

公开(公告)日：2018-08-28

申请号：US14929608

申请日：2015-11-02

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H01F27/28 ,  H01F17/00 ,  H04J1/08 ,  H03H7/46 ,  H03H7/38 ,  H04B1/40

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: Embodiments of an apparatus are disclosed that includes a first three dimensional (3D) inductor and a second 3D inductor. The first three dimensional (3D) inductor has a first conductive path shaped as a first two dimensional (2D) lobe laid over a first 3D volume. In addition, the second 3D inductor has a second conductive path, wherein the second 3D inductor is inserted into the first 3D inductor so that the second conductive path at least partially extends through the first 3D volume. Since second 3D inductor is inserted into the first 3D inductor, the 3D inductors may be coupled to one another. Depending on orientation and distances of structures provided by the 3D inductors, the 3D inductors may be weakly or moderately coupled.

公开(公告)号：US09831192B2

公开(公告)日：2017-11-28

申请号：US15154583

申请日：2016-05-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. Petzold ,  David Scott Whitefield

IPC: H01L21/84 ,  H01L23/00 ,  H01L27/12 ,  H01L23/66 ,  H03H9/24 ,  H01L21/764 ,  H01L21/768 ,  H01L23/528 ,  H01L49/02 ,  H01L29/06 ,  H01L29/78 ,  H04B1/40 ,  H01L21/306 ,  H01L23/535 ,  H01L29/66 ,  H01L29/786 ,  H04B1/44 ,  H01L21/683 ,  H01L25/16 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

公开(公告)号：US20170317662A1

公开(公告)日：2017-11-02

申请号：US15496205

申请日：2017-04-25

Applicant: Tesat-Spacecom GmbH & Co. KG

Inventor： Tobias Kaesser

IPC: H03H9/24 ,  H03H9/46 ,  H03H3/007

CPC classification number: H01P1/207 ,  H01P7/06 ,  H03H3/007 ,  H03H9/24 ,  H03H9/46

Abstract: A resonator, in particular a high-frequency resonator, includes a resonator housing with a resonator space formed therein and a container with a cavity in which a liquid crystal is accommodated, wherein the container is at least partially arranged in the resonator space and includes an electrode configuration for generating an electric control field for controlling the permittivity of the liquid crystal.

公开(公告)号：US20170125656A1

公开(公告)日：2017-05-04

申请号：US15289921

申请日：2016-10-10

Applicant: The Regents of the University of Colorado a body corporate

Inventor： Mahmoud I. Hussein

IPC: H01L35/04 ,  H01L35/14 ,  H01L35/30 ,  H03H9/24 ,  G10K11/04 ,  G10K11/172

CPC classification number: H01L35/04 ,  B82Y20/00 ,  B82Y30/00 ,  G02B1/002 ,  G02B1/005 ,  G10K11/04 ,  G10K11/172 ,  H01L35/14 ,  H01L35/26 ,  H01L35/30 ,  H03H9/24 ,  H03H9/2405 ,  H03H2009/155 ,  Y10S977/833 ,  Y10S977/932

Abstract: Phononic metamaterials and methods for reducing the group velocities and the thermal conductivity in at least partially crystalline base material are provided, such as for thermoelectric energy conversion. In one implementation, a method for reducing thermal conductivity through an at least partially crystalline base material is provided. In another implementation, a phononic metamaterial structure is provided. The phononic metamaterial structure in this implementation includes: an at least partially crystalline base material configured to allow a plurality of phonons to move to provide thermal conduction through the base material; and at least one disordered (e.g., amorphous) material coupled (e.g., as an inclusion, extending substructure, outer matrix, a coating to heavy inner inclusion, etc.) to the at least partially crystalline base material. The at least one disordered material is configured to generate at least one vibration mode by the oscillation of at least one atom within the disordered material to interact with the plurality of phonons moving within the base material and slow group velocities of at least a portion of the interacting phonons and reduce thermal conductivity through the base material.

公开(公告)号：US20170033758A9

公开(公告)日：2017-02-02

申请号：US14808183

申请日：2015-07-24

Applicant: UNIVERSITY OF YAMANASHI ,  THE JAPAN STEEL WORKS, LTD.

Inventor： Naoto SEKIYA ,  Katsuhiro TERAO ,  Kazuhito KISHIDA ,  Yasuo SATO ,  Noritaka KITADA

IPC: H03H7/01 ,  H03H9/24

CPC classification number: H01P1/20309 ,  H01P1/20372 ,  H01P7/082 ,  H01P7/088 ,  H01P7/105 ,  H03H7/0161 ,  H03H9/24 ,  H03H2210/028

Abstract: A tunable dual-band resonator and a tunable dual-band band-pass filter using the tunable dual-band resonator. The dual-band resonator is structured such that a stub is added to each half-wavelength resonator provided with half-wavelength resonator protrusions (capacity-component adjust parts). The dual-band resonator is made up of an odd-number mode resonator in a shape including a ground conductor disposed on the back surface of a dielectric body, and a strip conductor disposed on the top surface thereof, and an even-number mode resonator in such a shape as to be formed when the stub is connected to an end face on the opposite side of the open-end of the strip, characterized in that a dielectric rod circular in cross section is provided in the space above the respective stubs, and another dielectric rod circular in cross section is provided in the space above the half-wavelength resonator protrusions.

Abstract translation: 可调谐双频带谐振器和可调谐双频带通滤波器，使用可调谐双频带谐振器。 双频带谐振器被构造为使得将短截线添加到具有半波长谐振器突起（电容分量调整部件）的每个半波长谐振器。 双波段谐振器由奇数模式谐振器构成，其形状包括布置在电介质体的背面上的接地导体和设置在其顶表面上的条状导体，以及偶数模式谐振器 当该短截线连接到条带的开口端的相对侧上的端面时形成为这样的形状，其特征在于，在所述短截线上方的空间中设置横截面为圆形的介质棒， 并且在半波长谐振器突起上方的空间中设置有横截面圆形的另一介质棒。

公开(公告)号：US20160336214A1

公开(公告)日：2016-11-17

申请号：US15154777

申请日：2016-05-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： David T. PETZOLD ,  David Scott WHITEFIELD

IPC: H01L21/764 ,  H01L23/00 ,  H01L23/528 ,  H04B1/40 ,  H01L21/768 ,  H01L25/16 ,  H01L49/02 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L23/562 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/764 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/5283 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L27/1203 ,  H01L27/20 ,  H01L28/10 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/786 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2223/6677 ,  H01L2224/03 ,  H01L2224/03002 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06135 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15313 ,  H03H9/02566 ,  H03H9/24 ,  H04B1/40 ,  H04B1/44 ,  H01L2224/45099

Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench above at least a portion of the electrical element, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.

Abstract translation: 射频（RF）器件的制造涉及提供场效应晶体管（FET），形成与FET的一个或多个电连接，在电连接的至少一部分上形成一个或多个电介质层，并且设置电气 元件至少部分地在所述一个或多个电介质层之上，所述电气元件经由所述一个或多个电连接与所述FET电连通。 RF器件制造还包括在一个或多个电介质层的至少一部分上施加界面材料，去除界面材料的至少一部分以在电元件的至少一部分上方形成沟槽，并且覆盖至少一个 所述界面材料的一部分和所述沟槽具有基底层以形成空腔，所述电气元件至少部分地设置在所述空腔内。

公开(公告)号：US09397285B2

公开(公告)日：2016-07-19

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H01L41/09 ,  H01L41/113 ,  H01H59/00 ,  B82Y15/00 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US20150155850A1

公开(公告)日：2015-06-04

申请号：US14615503

申请日：2015-02-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuma KUZUSHITA ,  Yasumasa TANIGUCHI ,  Takashi MIYAKE

IPC: H03H9/24

CPC classification number: H03H9/0576 ,  H03H7/463 ,  H03H9/0566 ,  H03H9/24 ,  H03H9/25 ,  H03H9/542 ,  H03H9/568 ,  H03H9/605 ,  H03H9/6483 ,  H03H9/706 ,  H03H9/725 ,  H03H2001/0085

Abstract: In an elastic wave filter device, an elastic wave filter element chip is mounted on a board. In the elastic wave filter element chip, a ladder filter including a plurality of series arm resonators and a plurality of parallel arm resonators are provided. In/on the board, a first inductor connected in parallel to the series arm resonator and a second inductor connected between the parallel arm resonators P1-P3 and a ground potential are provided. In/on the board, a shield electrode is located between the first inductor and the second inductor.

Abstract translation: 在弹性波滤波器装置中，弹性波滤波器元件芯片安装在板上。 在弹性波滤波器元件芯片中，设置有包括多个串联臂谐振器和多个并联臂谐振器的梯形滤波器。 在板上，提供与串联臂谐振器并联连接的第一电感器和连接在并联臂谐振器P1-P3和接地电位之间的第二电感器。 在板上，屏蔽电极位于第一电感器和第二电感器之间。

公开(公告)号：US20150097632A1

公开(公告)日：2015-04-09

申请号：US14505579

申请日：2014-10-03

Applicant: Seiko Epson Corporation

Inventor： Akinori YAMADA

IPC: H03H9/24 ,  H02N1/00 ,  H03B5/30 ,  B81B3/00

CPC classification number: H02N1/006 ,  H03H9/24

Abstract: A MEMS vibrator includes: a base portion; a plurality of vibration reeds which extends from the base portion; a supporting portion which extends from a vibration node portion of the base portion; a fixing portion which is connected with the supporting portion; and a substrate in which the fixing portion is disposed on a main surface. The plurality of vibration reeds is separated from the substrate.

Abstract translation: MEMS振动器包括：基部; 从所述基部延伸的多个振动片; 支撑部，其从所述基部的振动节部延伸; 与所述支撑部连接的固定部; 以及其中固定部分设置在主表面上的基板。 多个振动片与基板分离。