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公开(公告)号：US09711604B1
公开(公告)日：2017-07-18
申请号：US15079436
申请日：2016-03-24
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L21/308 , H01L29/423 , H01L21/306 , H01L21/283
CPC分类号： H01L21/283 , H01L21/30604 , H01L21/3085 , H01L21/823456 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/78
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US11387105B2
公开(公告)日：2022-07-12
申请号：US17001382
申请日：2020-08-24
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L21/306 , H01L21/283 , H01L21/308 , H01L21/8234 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/51
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US20170194443A1
公开(公告)日：2017-07-06
申请号：US15079436
申请日：2016-03-24
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L29/423 , H01L21/308 , H01L21/283 , H01L21/306
CPC分类号： H01L21/283 , H01L21/30604 , H01L21/3085 , H01L21/823456 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/78
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US11316033B2
公开(公告)日：2022-04-26
申请号：US16900748
申请日：2020-06-12
发明人： Jin-Dah Chen , Stan Chen
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/78
摘要： A method includes forming a work function metal layer over first and second semiconductor fins extending upward from a substrate; forming a sacrificial layer straddling the first semiconductor fin but not overlapping the second semiconductor fin; patterning the first work function metal layer using the sacrificial layer, resulting in a patterned work function metal layer under the sacrificial layer, and a work function metal residue in the vicinity of the second semiconductor fin; selectively forming a protective layer on a side surface of the sacrificial layer and a side surface of the patterned first work function metal layer; removing the work function metal residue after selectively forming the protective layer; after removing the work function metal residue, removing the sacrificial layer and the protective layer; and forming a second work function metal layer over the first and second semiconductor fins.
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公开(公告)号：US20190252193A1
公开(公告)日：2019-08-15
申请号：US16396429
申请日：2019-04-26
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L21/283 , H01L29/78 , H01L29/66 , H01L29/49 , H01L21/306 , H01L21/8234 , H01L21/308
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US10276392B2
公开(公告)日：2019-04-30
申请号：US15642559
申请日：2017-07-06
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L21/306 , H01L21/283 , H01L21/308 , H01L21/8234 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/51
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US10755936B2
公开(公告)日：2020-08-25
申请号：US16396429
申请日：2019-04-26
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L21/306 , H01L21/283 , H01L21/308 , H01L21/8234 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/51
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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公开(公告)号：US20170309718A1
公开(公告)日：2017-10-26
申请号：US15642559
申请日：2017-07-06
发明人： Jin-Dah Chen , Ming-Feng Shieh , Han-Wei Wu , Yu-Hsien Lin , Po-Chun Liu , Stan Chen
IPC分类号： H01L29/423 , H01L21/308 , H01L21/306 , H01L21/283
CPC分类号： H01L21/283 , H01L21/30604 , H01L21/3085 , H01L21/823456 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/78
摘要： First, second, and third trenches are formed in a layer over a substrate. The third trench is substantially wider than the first and second trenches. The first, second, and third trenches are partially filled with a first conductive material. A first anti-reflective material is coated over the first, second, and third trenches. The first anti-reflective material has a first surface topography variation. A first etch-back process is performed to partially remove the first anti-reflective material. Thereafter, a second anti-reflective material is coated over the first anti-reflective material. The second anti-reflective material has a second surface topography variation that is smaller than the first surface topography variation. A second etch-back process is performed to at least partially remove the second anti-reflective material in the first and second trenches. Thereafter, the first conductive material is partially removed in the first and second trenches.
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