公开(公告)号：US20170077222A1

公开(公告)日：2017-03-16

申请号：US14854915

申请日：2015-09-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Ru LEE ,  Chii-Horng LI ,  Chien-I KUO ,  Heng-Wen TING ,  Jung-Chi TAI ,  Lilly SU ,  Tzu-Ching LIN

IPC: H01L29/06 ,  H01L29/08 ,  H01L21/764 ,  H01L21/762 ,  H01L21/283 ,  H01L21/306 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0649 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, at least one first isolation structure, at least two second isolation structure, and an epitaxy structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures, and the second isolation structures extend into the substrate further than the first isolation structure. The epitaxy structure is disposed on the semiconductor fins. At least one void is present between the first isolation structure and the epitaxy structure.

Abstract translation: 半导体器件包括衬底，至少一个第一隔离结构，至少两个第二隔离结构和外延结构。 基板在其中具有多个半导体翅片。 第一隔离结构设置在半导体翅片之间。 半导体鳍片设置在第二隔离结构之间，并且第二隔离结构比第一隔离结构延伸到衬底中。 外延结构设置在半导体鳍片上。 在第一隔离结构和外延结构之间存在至少一个空隙。