公开(公告)号：US12113042B2

公开(公告)日：2024-10-08

申请号：US17450104

申请日：2021-10-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Liang Lu ,  Wei-Lin Chen ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L23/00

CPC分类号： H01L24/73 ,  H01L24/11 ,  H01L24/17 ,  H01L2224/11466 ,  H01L2224/11845 ,  H01L2224/1703 ,  H01L2224/73104 ,  H01L2224/9211

摘要： Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

公开(公告)号：US11756842B2

公开(公告)日：2023-09-12

申请号：US17448002

申请日：2021-09-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Liang Lu ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L23/58 ,  H01L29/10 ,  H01L21/66 ,  H01L23/00

CPC分类号： H01L22/34 ,  H01L23/585 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/08135 ,  H01L2224/80895

摘要： A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

公开(公告)号：US11923393B2

公开(公告)日：2024-03-05

申请号：US17143874

申请日：2021-01-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun-Liang Lu ,  Cheng-Hao Chiu ,  Huan-En Lin ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.

公开(公告)号：US20230361140A1

公开(公告)日：2023-11-09

申请号：US17738031

申请日：2022-05-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Liang Lu ,  Ming-Hsien Yang ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685

摘要： Provided is an image sensor and a method of forming the same. The image sensor includes a first substrate having a first surface and a second surface opposite to each other; a plurality of photodetectors, disposed in the first substrate; and a plurality of color filters, disposed on the second surface of the first substrate and respectively corresponding to the plurality of photodetectors. The plurality of color filters are composed of a plurality of PIN diodes, and the plurality of PIN diodes are configured to absorb light of different wavelength ranges by applying different bias voltages.