公开(公告)号：US11756842B2

公开(公告)日：2023-09-12

申请号：US17448002

申请日：2021-09-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Liang Lu ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC分类号： H01L23/58 ,  H01L29/10 ,  H01L21/66 ,  H01L23/00

CPC分类号： H01L22/34 ,  H01L23/585 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/08135 ,  H01L2224/80895

摘要： A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

公开(公告)号：US11569289B2

公开(公告)日：2023-01-31

申请号：US17410666

申请日：2021-08-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yun-Wei Cheng ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC分类号： H01L27/146 ,  H01L23/00

摘要： A semiconductor structure includes a substrate having a pixel array region and a first seal ring region, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The semiconductor structure further includes a first isolation feature in the first seal ring region, wherein the first isolation feature is filled with a dielectric material, and the first isolation feature is a continuous structure surrounding the pixel array region. The semiconductor structure further includes a second isolation feature between the first isolation feature and the pixel array region, wherein the second isolation feature is filled with the dielectric material.

公开(公告)号：US11569288B2

公开(公告)日：2023-01-31

申请号：US17225701

申请日：2021-04-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yun-Wei Cheng ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC分类号： H01L27/146 ,  H01L23/00

摘要： A semiconductor structure includes a sensor chip. The sensor chip includes a pixel array region, a bonding pad region, and a periphery region surrounding the pixel array region. The semiconductor structure further includes a stress-releasing trench, wherein the stress-releasing trench is in the periphery region, and the stress-releasing trench fully surrounds a perimeter of the pixel array region and the bonding pad region.

公开(公告)号：US10985199B2

公开(公告)日：2021-04-20

申请号：US16591891

申请日：2019-10-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen ,  Chun-Wei Chia

IPC分类号： H01L27/146 ,  H01L23/00

摘要： A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.