公开(公告)号：US12068248B2

公开(公告)日：2024-08-20

申请号：US17217694

申请日：2021-03-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Yen Huang ,  Ting-Ya Lo ,  Shao-Kuan Lee ,  Chi-Lin Teng ,  Cheng-Chin Lee ,  Hsiaokang Chang ,  Shau-Lin Shue

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/5283 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226

摘要： An interconnect structure includes a dielectric layer, a conductive feature, a conductive layer, a capping layer, a support layer and an etch stop layer. The conductive feature is disposed in the dielectric layer. A first portion of the conductive layer is disposed over the first conductive feature, and a second portion of the conductive layer is disposed over the dielectric layer. A first portion of the capping layer is in contact with the first portion of the conductive layer, a second portion of the capping layer is in contact with the second portion of the conductive layer, and a third portion of the capping layer is in contact with the dielectric layer. An air gap is defined by the support layer and the capping layer. The etch stop layer is disposed over the second portion of the conductive layer, the second portion of the capping layer and the support layer.

公开(公告)号：US12033889B2

公开(公告)日：2024-07-09

申请号：US18097418

申请日：2023-01-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Yen Huang ,  Ting-Ya Lo ,  Shao-Kuan Lee ,  Chi-Lin Teng ,  Cheng-Chin Lee ,  Hsiaokang Chang ,  Shau-Lin Shue

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76841 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53295 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

摘要： An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.

公开(公告)号：US12132000B2

公开(公告)日：2024-10-29

申请号：US17460168

申请日：2021-08-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shao-Kuan Lee ,  Cheng-Chin Lee ,  Cherng-Shiaw Tsai ,  Kuang-Wei Yang ,  Hsin-Yen Huang ,  Hsiaokang Chang ,  Shau-Lin Shue

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/535 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L23/53276 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L23/535 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/775 ,  H01L29/78618 ,  H01L29/78696

摘要： An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a second conductive feature disposed over the first conductive feature, a third conductive feature disposed adjacent the second conductive feature, a first dielectric material disposed between the second and third conductive features, a first one or more graphene layers disposed between the second conductive feature and the first dielectric material, and a second one or more graphene layers disposed between the third conductive feature and the first dielectric material.

公开(公告)号：US12074060B2

公开(公告)日：2024-08-27

申请号：US17460173

申请日：2021-08-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Cheng-Chin Lee ,  Shao-Kuan Lee ,  Kuang-Wei Yang ,  Cherng-Shiaw Tsai ,  Hsin-Yen Huang ,  Hsiaokang Chang ,  Shau-Lin Shue

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76837 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53295

摘要： An interconnection structure, along with methods of forming such, are described. The structure includes a first conductive feature, a first liner having a first top surface disposed on the first conductive feature, a second conductive feature disposed adjacent the first conductive feature, and a second liner disposed on at least a portion of the second conductive feature. The second liner has a second top surface, and the first liner and the second liner each comprises a two-dimensional material. The structure further includes a first dielectric material disposed between the first and second conductive features and a dielectric layer disposed on the first dielectric material. The dielectric layer has a third top surface, and the first, second, and third top surfaces are substantially co-planar.

公开(公告)号：US11923357B2

公开(公告)日：2024-03-05

申请号：US17151345

申请日：2021-01-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kai-Fang Cheng ,  Kuang-Wei Yang ,  Cherng-Shiaw Tsai ,  Hsiaokang Chang

IPC分类号： H01L23/14 ,  H01L23/538 ,  H01L25/065 ,  H01L27/06

CPC分类号： H01L27/0688 ,  H01L23/147 ,  H01L23/5385 ,  H01L25/0657

摘要： An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

公开(公告)号：US11557511B2

公开(公告)日：2023-01-17

申请号：US17146821

申请日：2021-01-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Yen Huang ,  Ting-Ya Lo ,  Shao-Kuan Lee ,  Chi-Lin Teng ,  Cheng-Chin Lee ,  Hsiaokang Chang ,  Shau-Lin Shue

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.