公开(公告)号：US20160204014A1

公开(公告)日：2016-07-14

申请号：US15075729

申请日：2016-03-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yu-Liang LIN ,  Weng-Jin WU ,  Jing-Cheng LIN

IPC分类号： H01L21/683 ,  H01L21/66

CPC分类号： H01L21/6835 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/6836 ,  H01L22/12 ,  H01L22/26 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0652 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of wafer bonding includes bonding a wafer to a carrier in a bonding system. The method further includes measuring thickness profile of the bonded wafer. The method further includes modifying surface contours of at least one of an upper plate or a lower plate of the bonding system during a bonding operation to improve planarity of bonded wafers based on the measured thickness profile, wherein modifying the surface contours of at least one of the upper plate or the lower plate comprises modifying the surface contours using a plurality of height adjusters.

摘要翻译： 晶片接合的方法包括将晶片接合到接合系统中的载体上。 该方法还包括测量接合晶片的厚度分布。 该方法还包括在接合操作期间修改接合系统的上板或下板中的至少一个的表面轮廓，以基于测量的厚度轮廓来改善接合的晶片的平面度，其中修改至少一个的表面轮廓 上板或下板包括使用多个高度调节器修改表面轮廓。

公开(公告)号：US20140374031A1

公开(公告)日：2014-12-25

申请号：US14479806

申请日：2014-09-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Wen-Chih CHIOU ,  Yu-Liang LIN ,  Hung-Jung TU

IPC分类号： H01L21/673 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02

CPC分类号： H01L21/6835 ,  H01L21/02057 ,  H01L21/67092 ,  H01L21/67173 ,  H01L21/67207 ,  H01L2221/68381 ,  Y10T156/11 ,  Y10T156/19

摘要： A wafer debonding and cleaning apparatus comprises a wafer debonding module configured to separate a semiconductor wafer from a carrier wafer. The wafer debonding and cleaning apparatus also comprises a first wafer cleaning module configured perform a first cleaning process to clean a surface of the semiconductor wafer. The wafer debonding and cleaning apparatus further comprises an automatic wafer handling module configured to transfer the semiconductor wafer from one of the wafer debonding module or the first wafer cleaning module to the other of the wafer debonding module or the first wafer cleaning module. The semiconductor wafer has a thickness ranging from about 0.20 μm to about 3 mm.

摘要翻译： 晶片剥离和清洁装置包括晶片剥离模块，其被配置为将半导体晶片与载体晶片分离。 晶片剥离和清洁设备还包括配置的第一晶片清洁模块，执行清洁半导体晶片的表面的第一清洁处理。 晶片剥离和清洁设备还包括自动晶片处理模块，其被配置为将半导体晶片从晶片剥离模块或第一晶片清洁模块之一转移到晶片剥离模块或第一晶片清洁模块中的另一个。 半导体晶片的厚度范围为约0.20μm至约3mm。