公开(公告)号：US09722065B1

公开(公告)日：2017-08-01

申请号：US15014842

申请日：2016-02-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yu-Syuan Lin ,  Jiun-Lei Yu ,  Ming-Cheng Lin ,  Chun Lin Tsai

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/47

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7786 ,  H02M3/00 ,  H02M3/1588 ,  Y02B70/1466

摘要： A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.

公开(公告)号：US09443969B2

公开(公告)日：2016-09-13

申请号：US13948925

申请日：2013-07-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： King-Yuen Wong ,  Po-Chih Chen ,  Chen-Ju Yu ,  Fu-Chih Yang ,  Jiun-Lei Jerry Yu ,  Fu-Wei Yao ,  Ru-Yi Su ,  Yu-Syuan Lin

IPC分类号： H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/518 ,  H01L29/7786 ,  H01L29/7787

摘要： A transistor includes a substrate, a channel layer over the substrate, an active layer over the channel layer, a metal diffusion barrier over the active layer, and a gate over the metal diffusion barrier. The active layer has a band gap discontinuity with the channel layer.

摘要翻译： 晶体管包括衬底，衬底上的沟道层，沟道层上的有源层，有源层上的金属扩散势垒以及金属扩散势垒上的栅极。 有源层与沟道层具有带隙不连续性。

公开(公告)号：US12087820B2

公开(公告)日：2024-09-10

申请号：US18301461

申请日：2023-04-17

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Yu-Syuan Lin ,  Jiun-Lei Yu ,  Ming-Cheng Lin ,  Chun Lin Tsai

IPC分类号： H01L29/10 ,  H01L27/085 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H02M3/158 ,  H02M3/00

CPC分类号： H01L29/1075 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/475 ,  H01L29/7786 ,  H01L29/7787 ,  H02M3/1588 ,  H01L29/2003 ,  H02M3/003 ,  Y02B70/10

摘要： A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.

公开(公告)号：US10269948B2

公开(公告)日：2019-04-23

申请号：US15944345

申请日：2018-04-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Han-Chin Chiu ,  Sheng-De Liu ,  Yu-Syuan Lin ,  Yao-Chung Chang ,  Cheng-Yuan Tsai

IPC分类号： H01L29/205 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20

摘要： A semiconductor structure includes a semiconductive substrate having a top surface, a III-V compound layer covering the top surface, and a passivation layer having a lower portion and an upper portion, both comprising at least one of oxide and nitride over the III-V compound layer. The semiconductor structure also includes an etch stop layer between the lower portion and the upper portion of the passivation layer, and a gate stack penetrating through the etch stop layer and landing on the lower portion of the passivation layer. The gate stack is surrounded by the etch stop layer.

公开(公告)号：US11631741B2

公开(公告)日：2023-04-18

申请号：US16947284

申请日：2020-07-27

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Yu-Syuan Lin ,  Jiun-Lei Yu ,  Ming-Cheng Lin ,  Chun Lin Tsai

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/20 ,  H02M3/158 ,  H02M3/00

摘要： A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.

公开(公告)号：US10727329B2

公开(公告)日：2020-07-28

申请号：US16219281

申请日：2018-12-13

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Yu-Syuan Lin ,  Jiun-Lei Yu ,  Ming-Cheng Lin ,  Chun Lin Tsai

IPC分类号： H01L29/778 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/47 ,  H01L29/10 ,  H02M3/158 ,  H02M3/00 ,  H01L29/20

摘要： A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.

公开(公告)号：US10170613B2

公开(公告)日：2019-01-01

申请号：US15664767

申请日：2017-07-31

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Yu-Syuan Lin ,  Jiun-Lei Yu ,  Ming-Cheng Lin ,  Chun Lin Tsai

IPC分类号： H02M3/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/20 ,  H01L29/47 ,  H02M3/158 ,  H01L29/778

摘要： A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.

公开(公告)号：US09941398B2

公开(公告)日：2018-04-10

申请号：US15072992

申请日：2016-03-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Han-Chin Chiu ,  Sheng-De Liu ,  Yu-Syuan Lin ,  Yao-Chung Chang ,  Cheng-Yuan Tsai

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/66

CPC分类号： H01L29/7784 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7783

摘要： A semiconductor structure comprises a semiconductive substrate comprising a top surface, a III-V compound layer over the semiconductive substrate, and a first passivation layer over the III-V compound layer. The semiconductor structure also includes an etch stop layer over the first passivation layer. The semiconductor structure further includes a gate stack over the first passivation layer and surrounded by the etch stop layer.