公开(公告)号：US11782338B2

公开(公告)日：2023-10-10

申请号：US17721758

申请日：2022-04-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Feng Yuan Hsu ,  Tran-Hui Shen ,  Ching-Hsiang Hsu

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.

公开(公告)号：US11287745B2

公开(公告)日：2022-03-29

申请号：US17121588

申请日：2020-12-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ching-Hsiang Hsu ,  James Jeng-Jyi Hwang ,  Feng Yuan Hsu

IPC: G03F7/20

Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the protrusion structures are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

公开(公告)号：US12235573B2

公开(公告)日：2025-02-25

申请号：US18361891

申请日：2023-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Feng Yuan Hsu ,  Tran-Hui Shen ,  Ching-Hsiang Hsu

IPC: G03F1/24

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

公开(公告)号：US11307489B2

公开(公告)日：2022-04-19

申请号：US16542179

申请日：2019-08-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Feng Yuan Hsu ,  Tran-Hui Shen ,  Ching-Hsiang Hsu

IPC: G03F1/24

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.

公开(公告)号：US12066760B2

公开(公告)日：2024-08-20

申请号：US17704309

申请日：2022-03-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ching-Hsiang Hsu ,  James Jeng-Jyi Hwang ,  Feng Yuan Hsu

IPC: G03F7/00

CPC classification number: G03F7/70066 ,  G03F7/70033 ,  G03F7/70191 ,  G03F7/70916

Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

公开(公告)号：US11255658B2

公开(公告)日：2022-02-22

申请号：US17002677

申请日：2020-08-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Feng Yuan Hsu ,  Chi-Ming Yang ,  Ching-Hsiang Hsu ,  Chyi Shyuan Chern

IPC: G01B11/06 ,  H01L21/66 ,  G01N21/21

Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

公开(公告)号：US10509311B1

公开(公告)日：2019-12-17

申请号：US15992017

申请日：2018-05-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee ,  Feng Yuan Hsu ,  Chyi Shyuan Chern ,  Chi-Ming Yang ,  Tsiao-Chen Wu ,  Chun-Lin Chang

IPC: G03F1/24 ,  G03F1/52 ,  G03F7/20

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

公开(公告)号：US11260495B2

公开(公告)日：2022-03-01

申请号：US16162178

申请日：2018-10-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji James Cui ,  Feng Yuan Hsu

IPC: B24B37/013 ,  H01L21/67 ,  B24B49/12 ,  B24B37/26 ,  B24B37/24 ,  B24B37/22

Abstract: A polishing pad for CMP is provided. The polishing pad includes a layer of material having a surface, a plurality of grooves indented into the surface in the layer of material, and a fluorescent indicator in the layer of material. Each of the plurality of grooves has a first depth, the fluorescent indicator has a second depth, and the second depth is equal to or less than the first depth.

公开(公告)号：US11199767B2

公开(公告)日：2021-12-14

申请号：US16713964

申请日：2019-12-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee ,  Feng Yuan Hsu ,  Chyi Shyuan Chern ,  Chi-Ming Yang ,  Tsiao-Chen Wu ,  Chun-Lin Chang

IPC: G03F1/24 ,  G03F1/52 ,  G03F7/20

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

公开(公告)号：US10760896B2

公开(公告)日：2020-09-01

申请号：US16116135

申请日：2018-08-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Feng Yuan Hsu ,  Chi-Ming Yang ,  Ching-Hsiang Hsu ,  Chyi Shyuan Chern

IPC: G01B11/06 ,  H01L21/66 ,  G01N21/21

Abstract: An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.