公开(公告)号：US11764067B2

公开(公告)日：2023-09-19

申请号：US17343686

申请日：2021-06-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee

IPC: C09K13/02 ,  H01L21/3063 ,  H01L21/308

CPC classification number: H01L21/3063 ,  H01L21/3085 ,  H01L21/3086

Abstract: The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10−3 M in the etching solution, wherein the ionic strength enhancer includes Li+, Na+, K+, Mg2+, Ca2+, N(CH3)+, or N(C2H5)4+, a solvent, and an etchant.

公开(公告)号：US11199767B2

公开(公告)日：2021-12-14

申请号：US16713964

申请日：2019-12-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee ,  Feng Yuan Hsu ,  Chyi Shyuan Chern ,  Chi-Ming Yang ,  Tsiao-Chen Wu ,  Chun-Lin Chang

IPC: G03F1/24 ,  G03F1/52 ,  G03F7/20

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

公开(公告)号：US20240250150A1

公开(公告)日：2024-07-25

申请号：US18443994

申请日：2024-02-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Liang Pan ,  Chen Yung Tzu ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Hung Chia-Yang ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/02126 ,  H01L21/0217 ,  H01L29/0847 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

公开(公告)号：US20210359104A1

公开(公告)日：2021-11-18

申请号：US17195967

申请日：2021-03-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Liang Pan ,  Yungtzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/49 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

公开(公告)号：US12125898B2

公开(公告)日：2024-10-22

申请号：US17358606

申请日：2021-06-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Sheng-Liang Pan ,  Yung-Tzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/417 ,  H01L29/51

CPC classification number: H01L29/6656 ,  H01L21/76224 ,  H01L29/41783 ,  H01L29/511 ,  H01L29/66795

Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

公开(公告)号：US11037792B2

公开(公告)日：2021-06-15

申请号：US16372096

申请日：2019-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/3063

Abstract: The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10−3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.

公开(公告)号：US10971353B2

公开(公告)日：2021-04-06

申请号：US16675934

申请日：2019-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee

IPC: F26B5/06 ,  H01L21/02 ,  H01L21/3065 ,  B08B3/10 ,  H01L21/687

Abstract: The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

公开(公告)号：US10509311B1

公开(公告)日：2019-12-17

申请号：US15992017

申请日：2018-05-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chung-Chieh Lee ,  Feng Yuan Hsu ,  Chyi Shyuan Chern ,  Chi-Ming Yang ,  Tsiao-Chen Wu ,  Chun-Lin Chang

IPC: G03F1/24 ,  G03F1/52 ,  G03F7/20

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

公开(公告)号：US12278277B2

公开(公告)日：2025-04-15

申请号：US18443994

申请日：2024-02-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Liang Pan ,  Yung Tzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

公开(公告)号：US11923433B2

公开(公告)日：2024-03-05

申请号：US17195967

申请日：2021-03-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Liang Pan ,  Yungtzu Chen ,  Chung-Chieh Lee ,  Yung-Chang Hsu ,  Chia-Yang Hung ,  Po-Chuan Wang ,  Guan-Xuan Chen ,  Huan-Just Lin

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/02126 ,  H01L21/0217 ,  H01L29/0847 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.