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公开(公告)号：US11302734B2
公开(公告)日：2022-04-12
申请号：US16120629
申请日：2018-09-04
发明人： Ming-Chi Wu , Chun-Chieh Fang , Bo-Chang Su , Chien Nan Tu , Yu-Lung Yeh , Kun-Yu Lin , Shih-Shiung Chen
IPC分类号： H01L27/146 , H01L21/762 , H01L21/3205 , H01L21/311 , H01L21/3065
摘要： A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.
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公开(公告)号：US09984918B2
公开(公告)日：2018-05-29
申请号：US15088126
申请日：2016-04-01
发明人： Ching-Chung Su , Jiech-Fun Lu , Jian Wu , Che-Hsiang Hsueh , Ming-Chi Wu , Chi-Yuan Wen , Chun-Chieh Fang , Yu-Lung Yeh
IPC分类号： H01L21/764 , H01L21/762
CPC分类号： H01L21/764 , H01L21/3083 , H01L21/76232
摘要： A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
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公开(公告)号：US11990493B2
公开(公告)日：2024-05-21
申请号：US17747514
申请日：2022-05-18
发明人： Chun-Chieh Fang , Ming-Chi Wu , Ji-Heng Jiang , Chi-Yuan Wen , Chien-Nan Tu , Yu-Lung Yeh , Shih-Shiung Chen , Kun-Yu Lin
IPC分类号： H01L21/02 , H01L27/146
CPC分类号： H01L27/14629 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14685
摘要： An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.
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公开(公告)号：US20200006410A1
公开(公告)日：2020-01-02
申请号：US16120629
申请日：2018-09-04
发明人： Ming-Chi Wu , Chun-Chieh Fang , Bo-Chang Su , Chien Nan Tu , Yu-Lung Yeh , Kun-Yu Lin , Shih-Shiung Chen
IPC分类号： H01L27/146 , H01L21/762 , H01L21/3205
摘要： A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.
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公开(公告)号：US10784150B2
公开(公告)日：2020-09-22
申请号：US16394772
申请日：2019-04-25
发明人： Ching-Chung Su , Jiech-Fun Lu , Jian Wu , Che-Hsiang Hsueh , Ming-Chi Wu , Chi-Yuan Wen , Chun-Chieh Fang , Yu-Lung Yeh
IPC分类号： H01L21/764 , H01L21/762 , H01L21/308
摘要： A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
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公开(公告)号：US10276427B2
公开(公告)日：2019-04-30
申请号：US15990162
申请日：2018-05-25
发明人： Ching-Chung Su , Jiech-Fun Lu , Jian Wu , Che-Hsiang Hsueh , Ming-Chi Wu , Chi-Yuan Wen , Chun-Chieh Fang , Yu-Lung Yeh
IPC分类号： H01L21/764 , H01L21/762 , H01L21/308
摘要： A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
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公开(公告)号：US20230387150A1
公开(公告)日：2023-11-30
申请号：US18364662
申请日：2023-08-03
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/028 , H01L31/0236 , H01L31/102
CPC分类号： H01L27/1461 , H01L31/03529 , H01L27/14645 , H01L27/14689 , H01L27/14638 , H01L27/1464 , H01L31/0284 , H01L27/14607 , H01L31/02363 , H01L31/102 , H01L27/14621 , H01L27/14627
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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