公开(公告)号：US20180174846A1

公开(公告)日：2018-06-21

申请号：US15380329

申请日：2016-12-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Shiang-Bau WANG ,  Victor Y. LU

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L21/28132 ,  H01L29/0847 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785

摘要： The present disclosure provides a semiconductor structure, including a semiconductor fin, a metal gate over the semiconductor fin, and a sidewall spacer composed of low-k dielectric surrounding opposing sidewalls of the metal gate. A portion of the sidewall spacer comprises a tapered profile with a greater separation of the opposing sidewalls toward a top portion and a narrower separation of the opposing sidewalls toward a bottom portion of the sidewall spacer. The present disclosure also provides a method of manufacturing a semiconductor device. The method includes forming a polysilicon stripe over a semiconductor fin, forming a nitride sidewall spacer surrounding a long side of the polysilicon stripe, forming a raised source/drain region in the semiconductor fin, and forming a carbonitride etch stop layer surrounding the nitride sidewall spacer.