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    SEMICONDUCTOR STRUCTURE WITH CAVITY SPACING MONITORING FUNCTIONS
    2.
    发明申请
    SEMICONDUCTOR STRUCTURE WITH CAVITY SPACING MONITORING FUNCTIONS 审中-公开

    公开(公告)号：US20180065841A1

    公开(公告)日：2018-03-08

    申请号：US15255606

    申请日：2016-09-02

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： JUNG-HUEI PENG ,  YI-CHIEN WU ,  YU-CHIA LIU ,  CHUN-WEN CHENG

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C99/0045

    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a cavity disposed in a substrate and enclosed by a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first electrode pair having a first electrode on the first surface and a second electrode on the second surface. The first electrode pair is configured to measure a first spacing between the first surface and the second surface. The semiconductor structure further includes a second electrode pair having a third electrode on the first surface and a fourth electrode on the second surface. The second electrode pair is configured to measure a second spacing between the first surface and the second surface.

    MEMS STRUCTURE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    MEMS STRUCTURE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210087056A1

    公开(公告)日：2021-03-25

    申请号：US16583111

    申请日：2019-09-25

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： KANG-CHE HUANG ,  YI-CHIEN WU ,  SHIANG-CHI LIN ,  JUNG-HUEI PENG ,  CHUN-WEN CHENG

    IPC: B81C1/00

    Abstract: A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

    MICRO-ELECTRO-MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF 审中-公开
    微电子机械系统及其制造方法

    公开(公告)号：US20170044004A1

    公开(公告)日：2017-02-16

    申请号：US14826249

    申请日：2015-08-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： CHUN-WEN CHENG ,  JUNG-HUEI PENG ,  CHIA-HUA CHU ,  NIEN-TSUNG TSAI ,  YAO-TE HUANG ,  LI-MIN HUNG ,  YU-CHIA LIU

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0077 ,  B81B2203/04 ,  B81B2207/07

    Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.

    Abstract translation: 本公开的一些实施例提供了一种微机电系统（MEMS）。 MEMS包括半导体块。 半导体块包括突出结构。 突出结构包括底面。 半导体块包括感测结构。 半导体基板包括导电区域。 导电区域包括感测结构下面的第一表面。 第一表面与底面基本共面。 电介质区域包括不设置在第一表面上的第二表面。

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