公开(公告)号：US20170044004A1

公开(公告)日：2017-02-16

申请号：US14826249

申请日：2015-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHUN-WEN CHENG ,  JUNG-HUEI PENG ,  CHIA-HUA CHU ,  NIEN-TSUNG TSAI ,  YAO-TE HUANG ,  LI-MIN HUNG ,  YU-CHIA LIU

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0077 ,  B81B2203/04 ,  B81B2207/07

Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.

Abstract translation: 本公开的一些实施例提供了一种微机电系统（MEMS）。 MEMS包括半导体块。 半导体块包括突出结构。 突出结构包括底面。 半导体块包括感测结构。 半导体基板包括导电区域。 导电区域包括感测结构下面的第一表面。 第一表面与底面基本共面。 电介质区域包括不设置在第一表面上的第二表面。

公开(公告)号：US20170081173A1

公开(公告)日：2017-03-23

申请号：US14861346

申请日：2015-09-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： YU-CHIA LIU ,  CHIA-HUA CHU ,  CHUN-WEN CHENG

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00182 ,  B81C2201/019 ,  B81C2203/0118

Abstract: The present disclosure provides a CMOS MEMS device. The CMOS MEMS device includes a first substrate, a second substrate, a first polysilicon and a second polysilicon. The second substrate includes a movable part and is located over the first substrate. The first polysilicon penetrates the second substrate and is adjacent to a first side of the movable part of the second substrate. The second polysilicon penetrates the second substrate and is adjacent to a second side of the movable part of the second substrate.

公开(公告)号：US20180065841A1

公开(公告)日：2018-03-08

申请号：US15255606

申请日：2016-09-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： JUNG-HUEI PENG ,  YI-CHIEN WU ,  YU-CHIA LIU ,  CHUN-WEN CHENG

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C99/0045

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a cavity disposed in a substrate and enclosed by a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first electrode pair having a first electrode on the first surface and a second electrode on the second surface. The first electrode pair is configured to measure a first spacing between the first surface and the second surface. The semiconductor structure further includes a second electrode pair having a third electrode on the first surface and a fourth electrode on the second surface. The second electrode pair is configured to measure a second spacing between the first surface and the second surface.