公开(公告)号：US20110204487A1

公开(公告)日：2011-08-25

申请号：US13100398

申请日：2011-05-04

申请人： TAKAHIRO NAKANO ,  MASAKI UTSUMI ,  HIKARI SANO

发明人： TAKAHIRO NAKANO ,  MASAKI UTSUMI ,  HIKARI SANO

IPC分类号： H01L23/48

CPC分类号： H01L27/14618 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/93 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/32225 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/12044 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate; a through electrode passing through the semiconductor substrate in a thickness direction of the semiconductor substrate; an internal electrode provided in a part of the top surface of the semiconductor substrate and electrically connected to the through electrode which reaches the part; a first protective film covering the top surface except a part of the internal electrode; a second protective film formed apart from the first protective film, on the part of the internal electrode, the part being not covered by the first protective film; and metal wiring formed on the back surface of the semiconductor substrate and electrically connected to the through electrode, the second main surface being on a side of the semiconductor substrate opposite the first main surface.

摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底的厚度方向上穿过半导体衬底的贯通电极; 设置在所述半导体基板的上表面的一部分中并与到达所述部分的所述贯通电极电连接的内部电极; 覆盖除了内部电极的一部分之外的顶表面的第一保护膜; 与第一保护膜分开形成的第二保护膜，在内部电极的一部分上，该部分不被第一保护膜覆盖; 以及形成在所述半导体基板的背面上并与所述贯通电极电连接的金属配线，所述第二主面位于所述半导体基板的与所述第一主面相反的一侧。