公开(公告)号：US20220189665A1

公开(公告)日：2022-06-16

申请号：US17687752

申请日：2022-03-07

Applicant: TDK CORPORATION

Inventor： Satoshi GOTO ,  Naoyoshi YOSHIDA ,  Takeshi YANATA ,  Takeshi OYANAGI ,  Daiki SUZUKI ,  Shin KAGAYA ,  Masayuki UCHIDA ,  Yusuke IMAI

IPC: H01C7/10 ,  H01C7/102 ,  H01C7/108

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

公开(公告)号：US20160379739A1

公开(公告)日：2016-12-29

申请号：US15185892

申请日：2016-06-17

Applicant: TDK CORPORATION

Inventor： Masayuki UCHIDA ,  Takahiro ITAMI ,  Naoyoshi YOSHIDA ,  Takeshi OYANAGI ,  Koki YAMADA ,  Kazuaki KAJIWARA

IPC: H01C7/12 ,  C04B35/453

CPC classification number: H01C7/12 ,  C04B35/453 ,  C04B35/638 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3218 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/3241 ,  C04B2235/3275 ,  C04B2235/3286 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/786 ,  C04B2235/79

Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.

Abstract translation: 一种电压非线性电阻陶瓷包括：一种氧化锌; 氧化钴; R（特定稀土）氧化物; 氧化铬; M1（Ca，Sr）氧化物; M2（Al，Ga，In）氧化物; 和钛酸锶。 当Zn含量以Zn换算为100摩尔份数时，Co氧化物的含量以Co计为0.30〜10摩尔，R的含量为R为0.10〜10摩尔， Cr氧化物的含量以Cr计为0.01〜2摩尔％，M1氧化物的含量为M1为0.10〜5摩尔，M2氧化物的含量为M2为0.0005〜5摩尔，含量 的钛酸锶以SrTiO 3换算为0.10〜5摩尔份。

公开(公告)号：US20220165460A1

公开(公告)日：2022-05-26

申请号：US17533920

申请日：2021-11-23

Applicant: TDK CORPORATION

Inventor： Shin KAGAYA ,  Masayuki UCHIDA ,  Naoyoshi YOSHIDA ,  Takeshi YANATA ,  Satoshi GOTO ,  Takeshi OYANAGI ,  Yusuke IMAI ,  Daiki SUZUKI ,  Kaname UEDA

IPC: H01C7/18 ,  H01C7/10 ,  H01C7/112

Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

公开(公告)号：US20210327616A1

公开(公告)日：2021-10-21

申请号：US17230100

申请日：2021-04-14

Applicant: TDK CORPORATION

Inventor： Satoshi GOTO ,  Naoyoshi YOSHIDA ,  Takeshi YANATA ,  Takeshi OYANAGI ,  Daiki SUZUKI ,  Shin KAGAYA ,  Masayuki UCHIDA ,  Yusuke IMAI

IPC: H01C7/10 ,  H01C7/108 ,  H01C7/102

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.