公开(公告)号：US20240062777A1

公开(公告)日：2024-02-22

申请号：US18240657

申请日：2023-08-31

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: G11B5/3903 ,  G01R33/093 ,  G11B5/3929 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H10B61/00 ,  H10N50/85 ,  G11B2005/3996

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):


Co2FeαXβ  (1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US20220328067A1

公开(公告)日：2022-10-13

申请号：US17853429

申请日：2022-06-29

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: G11B5/39 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  G01R33/09

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US20210043225A1

公开(公告)日：2021-02-11

申请号：US16984381

申请日：2020-08-04

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: G11B5/39 ,  H01L27/22 ,  H01L43/10 ,  H01F10/32 ,  C22C30/00 ,  C23C14/30 ,  C23C14/34 ,  C23C14/08 ,  C23C14/18 ,  C23C14/58

Abstract: To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product).
The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US20190273203A1

公开(公告)日：2019-09-05

申请号：US16190695

申请日：2018-11-14

Applicant: TDK CORPORATION ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive effect element according to the present disclosure includes: a first ferromagnetic layer serving as a magnetization free layer; a second ferromagnetic layer serving as a magnetization fixed layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy represented by Formula (1): X2MnαZβ . . . (1) where X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔