公开(公告)号：US11769523B2

公开(公告)日：2023-09-26

申请号：US17853429

申请日：2022-06-29

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tetsuya Uemura

IPC: G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  G01R33/09 ,  H10B61/00 ,  H10N50/85

CPC classification number: G11B5/3903 ,  G01R33/093 ,  G11B5/3929 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H10B61/00 ,  H10N50/85 ,  G11B2005/3996

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1):

Co2FeαXβ  (1)

(in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US11410689B2

公开(公告)日：2022-08-09

申请号：US16984381

申请日：2020-08-04

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tetsuya Uemura

IPC: G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  G01R33/09 ,  H01L27/22 ,  H01L43/10

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US12217775B2

公开(公告)日：2025-02-04

申请号：US18240657

申请日：2023-08-31

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tetsuya Uemura

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α