Abstract:
The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.
Abstract:
A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.