公开(公告)号：US09614463B2

公开(公告)日：2017-04-04

申请号：US14176741

申请日：2014-02-10

Applicant: TDK CORPORATION

Inventor： Yuiko Hirose ,  Yasuhiro Aida

IPC: H01L41/04 ,  H02N2/00 ,  H01L41/187 ,  B06B1/02 ,  H02N2/14 ,  H01L41/09

CPC classification number: H02N2/0075 ,  B06B1/0253 ,  B06B2201/55 ,  H01L41/042 ,  H01L41/0973 ,  H01L41/1873 ,  H02N2/14

Abstract: A piezoelectric device is provided with a piezoelectric element including a piezoelectric layer exhibiting a polarizability γ smaller than 1×10−9 (C/(V·m)) in the case where an electric field is applied until polarization is saturated and a circuit having a means to set a minimum value of a drive electric field to become larger than a positive coercive electric field of the above-described piezoelectric layer and a means to set a maximum value of the above-described drive electric field to become smaller than (Pm′(maximum value of polarization)−Pr′(quasi-remanent polarization))/(1×10−9) and, therefore, an object is to drive the piezoelectric element in an electric field range in which maximum piezoelectric characteristics are obtained, improve the characteristics of the piezoelectric device, and enhance the reliability.

公开(公告)号：US09331262B2

公开(公告)日：2016-05-03

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko Maejima ,  Yasuhiro Aida ,  Yoshitomo Tanaka ,  Katsuyuki Kurachi ,  Hitoshi Sakuma

IPC: H01L41/187 ,  C04B35/00 ,  H01L41/08 ,  B41J2/14 ,  G01L9/00 ,  G11B5/55 ,  H01L41/316 ,  B41J2/16 ,  G01C19/5621 ,  G01C19/5628

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US09277869B2

公开(公告)日：2016-03-08

申请号：US14047649

申请日：2013-10-07

Applicant: TDK CORPORATION

Inventor： Katsuyuki Kurachi ,  Yasuhiro Aida ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: H01L41/187 ,  A61B5/024 ,  B41J2/14 ,  G01C19/5621 ,  G01L9/00 ,  G11B5/55 ,  H01L41/08 ,  H01L41/316

CPC classification number: A61B5/02444 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5621 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/316

Abstract: There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K1-w-xNawSrx)m(Nb1-yZry)O3 and which is preferentially oriented to (001), and a pair of electrode films that sandwich the piezoelectric thin film, a thin-film piezoelectric actuator, and a thin-film piezoelectric sensor each including the thin-film piezoelectric element.

Abstract translation: 提供了一种薄膜压电元件，其包括具有由组成式（K1-w-xNawSrx）m（Nb1-yZry）O3表示的碱铌酸酯基钙钛矿结构的压电薄膜，其优先取向为（001 ）和夹着压电薄膜的一对电极膜，薄膜压电致动器和薄膜压电传感器，每个薄膜压电传感器都包括薄膜压电元件。

公开(公告)号：US20150096617A1

公开(公告)日：2015-04-09

申请号：US14381418

申请日：2013-02-28

Applicant: TDK CORPORATION

Inventor： Masato Kurihara ,  Yasuhiro Aida

IPC: H01L31/032 ,  H01L31/0296 ,  H01L31/0749

CPC classification number: H01L31/0322 ,  H01L31/0296 ,  H01L31/0368 ,  H01L31/0749 ,  Y02E10/541

Abstract: A compound semiconductor solar battery according to the present invention includes a substrate; a back electrode disposed on the substrate; a p-type compound semiconductor light absorbing layer disposed on the back electrode; an n-type compound semiconductor buffer layer disposed on the p-type compound semiconductor light absorbing layer; and a transparent electrode disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorbing layer has a cross sectional structure including, in a thickness direction, a portion only of a single particle and a portion of a plurality of piled particles. In the portion of a plurality of piled particles, the particles in contact with the back electrode have a ratio y1 of Ga/(In+Ga), and the particles in contact with the n-type compound semiconductor buffer layer have a ratio y2 of Ga/(In+Ga), where y1>y2.

Abstract translation: 根据本发明的复合半导体太阳能电池包括基板; 设置在所述基板上的背面电极; 设置在背面电极上的p型化合物半导体光吸收层; 设置在p型化合物半导体光吸收层上的n型化合物半导体缓冲层; 以及设置在n型化合物半导体缓冲层上的透明电极。 p型化合物半导体光吸收层具有在厚度方向上仅具有单个颗粒的一部分和多个堆积颗粒的一部分的横截面结构。 在多个堆积粒子的部分中，与背面电极接触的粒子的比率y1为Ga /（In + Ga），与n型化合物半导体缓冲层接触的粒子的比例y2为 Ga /（In + Ga），其中y1> y2。

公开(公告)号：US10964879B2

公开(公告)日：2021-03-30

申请号：US15800873

申请日：2017-11-01

Applicant: TDK CORPORATION

Inventor： Katsuyuki Kurachi ,  Hitoshi Sakuma ,  Yasuhiro Aida ,  Kazuhiko Maejima ,  Mayumi Nakajima

IPC: H01L41/08 ,  H01L41/312 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H01L41/35 ,  H01L41/311 ,  C30B23/02 ,  H01L49/02

Abstract: A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

公开(公告)号：US09076968B2

公开(公告)日：2015-07-07

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Yoshitomo Tanaka ,  Hitoshi Sakuma ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16 ,  H01L41/08 ,  G01L9/00 ,  H01L41/09

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。

公开(公告)号：US09065049B2

公开(公告)日：2015-06-23

申请号：US13624573

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Hitoshi Sakuma ,  Yasuhiro Aida ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  H01L41/18 ,  H01L41/08 ,  H01L41/316 ,  G01C19/5621 ,  G01C19/5628

CPC classification number: H01L41/18 ,  G01C19/5621 ,  G01C19/5628 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.

Abstract translation: 根据本发明的薄膜压电装置包括一对电极层和介于一对电极层之间的压电薄膜，其中压电薄膜含有稀有气体元素，并且具有稀有气体元素的含量梯度 压电薄膜的厚度方向。

公开(公告)号：US09147827B2

公开(公告)日：2015-09-29

申请号：US13687785

申请日：2012-11-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Katsuyuki Kurachi ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: H01L41/187 ,  C04B35/00 ,  H01L41/08 ,  H01L41/18

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5607 ,  G01L9/008 ,  G11B5/483 ,  G11B5/4873 ,  H01L41/0973 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract translation: 本发明的目的是减少包含铌酸钾钠薄膜的压电元件的泄漏电流，提高压电元件的可靠性，另外通过包括一对电极和夹在 上述一对电极层，其中上述压电层设置有至少一层第一压电层，第一压电层是基本不含Mn（锰）的铌酸钾钠薄膜和第二压电层，第二压电层为 含铌酸钾钠薄膜。

公开(公告)号：US09130169B2

公开(公告)日：2015-09-08

申请号：US13827126

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Yoshitomo Tanaka ,  Hitoshi Sakuma ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16 ,  H01L41/08 ,  G01L9/00 ,  H01L41/09

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract translation: 压电元件作为压电体层包含作为由通式ABO3表示的钙钛矿化合物的铌酸钾钠的薄膜，其中Sr（锶）在A位置和B位都被取代，Mn（ 锰）仅在A位置上被取代。 因此，提供了使用铌酸钾钠薄膜来降低压电元件的泄漏电流的压电元件，以提高其耐压并提高其压电特性。

公开(公告)号：US09022532B1

公开(公告)日：2015-05-05

申请号：US14058912

申请日：2013-10-21

Applicant: TDK Corporation

Inventor： Yasuhiro Aida ,  Ryu Ohta ,  Yoshitomo Tanaka ,  Hiroshi Chihara ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: B41J2/045 ,  H01L41/08 ,  H01L41/187 ,  G01L1/16

CPC classification number: H01L41/0805 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract translation: 可以增加作为致动器的位移或作为压电元件的传感器的灵敏度，并且另外可以通过提供作为钙钛矿型化合物的铌酸钾钠的薄膜来降低电力消耗， 通式ABO3作为压电层，其中铌酸钾钠的晶体结构的晶体取向作为整体压电层的面内四重对称，其中旋转对称的第一轴是压电层的厚度方向。