公开(公告)号：US11594668B2

公开(公告)日：2023-02-28

申请号：US16719009

申请日：2019-12-18

Applicant: TDK Corporation

Inventor： Kenta Ishii ,  Masaru Nanao ,  Hitoshi Sakuma ,  Takao Noguchi

IPC: H01L41/04 ,  H01L41/047 ,  H01L41/08 ,  C23C16/48 ,  C23C16/06 ,  C23C14/08 ,  C23C14/34 ,  C23C16/40 ,  H01L41/187

Abstract: A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

公开(公告)号：US10790434B2

公开(公告)日：2020-09-29

申请号：US15831630

申请日：2017-12-05

Applicant: TDK CORPORATION

Inventor： Hitoshi Sakuma ,  Tomohisa Azuma ,  Kenta Ishii

IPC: H01L41/083 ,  H01L41/08 ,  B41J2/14 ,  H01L41/187 ,  H01L41/047 ,  H01L41/18 ,  G11B21/10 ,  H01L41/09 ,  H01L41/316 ,  G11B5/48 ,  H01L41/113

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO3.

公开(公告)号：US09331262B2

公开(公告)日：2016-05-03

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko Maejima ,  Yasuhiro Aida ,  Yoshitomo Tanaka ,  Katsuyuki Kurachi ,  Hitoshi Sakuma

IPC: H01L41/187 ,  C04B35/00 ,  H01L41/08 ,  B41J2/14 ,  G01L9/00 ,  G11B5/55 ,  H01L41/316 ,  B41J2/16 ,  G01C19/5621 ,  G01C19/5628

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US09277869B2

公开(公告)日：2016-03-08

申请号：US14047649

申请日：2013-10-07

Applicant: TDK CORPORATION

Inventor： Katsuyuki Kurachi ,  Yasuhiro Aida ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: H01L41/187 ,  A61B5/024 ,  B41J2/14 ,  G01C19/5621 ,  G01L9/00 ,  G11B5/55 ,  H01L41/08 ,  H01L41/316

CPC classification number: A61B5/02444 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5621 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/316

Abstract: There are provided a thin-film piezoelectric element including a piezoelectric thin film which has an alkali niobate-based perovskite structure represented by the composition formula (K1-w-xNawSrx)m(Nb1-yZry)O3 and which is preferentially oriented to (001), and a pair of electrode films that sandwich the piezoelectric thin film, a thin-film piezoelectric actuator, and a thin-film piezoelectric sensor each including the thin-film piezoelectric element.

Abstract translation: 提供了一种薄膜压电元件，其包括具有由组成式（K1-w-xNawSrx）m（Nb1-yZry）O3表示的碱铌酸酯基钙钛矿结构的压电薄膜，其优先取向为（001 ）和夹着压电薄膜的一对电极膜，薄膜压电致动器和薄膜压电传感器，每个薄膜压电传感器都包括薄膜压电元件。

公开(公告)号：US10964879B2

公开(公告)日：2021-03-30

申请号：US15800873

申请日：2017-11-01

Applicant: TDK CORPORATION

Inventor： Katsuyuki Kurachi ,  Hitoshi Sakuma ,  Yasuhiro Aida ,  Kazuhiko Maejima ,  Mayumi Nakajima

IPC: H01L41/08 ,  H01L41/312 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29 ,  H01L41/35 ,  H01L41/311 ,  C30B23/02 ,  H01L49/02

Abstract: A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

公开(公告)号：US09837596B2

公开(公告)日：2017-12-05

申请号：US14304460

申请日：2014-06-13

Applicant: TDK CORPORATION

Inventor： Ryu Ohta ,  Hitoshi Sakuma ,  Yuiko Hirose

IPC: H01L41/18 ,  H01L41/08 ,  H01L41/187 ,  H01L41/09 ,  H01L41/316

CPC classification number: H01L41/0805 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, and an upper electrode, wherein the piezoelectric layer is present between the lower electrode and the upper electrode, and the piezoelectric layer has the value determined by dividing the maximum value of intensity of a diffraction peak, where the angle of 2θ is within the range of 21.1°≦2θ≦23.4° in the X-ray diffraction pattern (2θ/θ), by the intensity of a diffraction peak, where 2θ is within the range of 30.1°≦2θ≦33.3°, of 0.04 or less.

公开(公告)号：US09076968B2

公开(公告)日：2015-07-07

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Yoshitomo Tanaka ,  Hitoshi Sakuma ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16 ,  H01L41/08 ,  G01L9/00 ,  H01L41/09

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。

公开(公告)号：US09065049B2

公开(公告)日：2015-06-23

申请号：US13624573

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Hitoshi Sakuma ,  Yasuhiro Aida ,  Katsuyuki Kurachi ,  Kazuhiko Maejima

IPC: H01L41/187 ,  H01L41/18 ,  H01L41/08 ,  H01L41/316 ,  G01C19/5621 ,  G01C19/5628

CPC classification number: H01L41/18 ,  G01C19/5621 ,  G01C19/5628 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.

Abstract translation: 根据本发明的薄膜压电装置包括一对电极层和介于一对电极层之间的压电薄膜，其中压电薄膜含有稀有气体元素，并且具有稀有气体元素的含量梯度 压电薄膜的厚度方向。

公开(公告)号：US09685602B2

公开(公告)日：2017-06-20

申请号：US15006395

申请日：2016-01-26

Applicant: TDK CORPORATION

Inventor： Hitoshi Sakuma ,  Ryu Ohta

IPC: G11B5/48 ,  H01L41/047 ,  H01L41/08 ,  B41J2/14 ,  H01L41/09 ,  H01L41/187 ,  H01L41/113

CPC classification number: H01L41/0477 ,  B41J2/14233 ,  G11B5/483 ,  H01L41/0805 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/1873

Abstract: The present invention provides a piezoelectric thin film element having a pair of electrode layers and a piezoelectric thin film sandwiched between the pair of electrode layers, wherein the pair of electrode layers are composed of platinum (Pt), oxide particles are contained in at least one of the electrode layers, and the oxide particles are oxide particles of at least one element constituting the piezoelectric thin film or oxide particles of Pt.

公开(公告)号：US09147827B2

公开(公告)日：2015-09-29

申请号：US13687785

申请日：2012-11-28

Applicant: TDK CORPORATION

Inventor： Yasuhiro Aida ,  Katsuyuki Kurachi ,  Hitoshi Sakuma ,  Kazuhiko Maejima

IPC: H01L41/187 ,  C04B35/00 ,  H01L41/08 ,  H01L41/18

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2202/03 ,  G01C19/5607 ,  G01L9/008 ,  G11B5/483 ,  G11B5/4873 ,  H01L41/0973 ,  H01L41/18 ,  H01L41/1873 ,  H01L41/316

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract translation: 本发明的目的是减少包含铌酸钾钠薄膜的压电元件的泄漏电流，提高压电元件的可靠性，另外通过包括一对电极和夹在 上述一对电极层，其中上述压电层设置有至少一层第一压电层，第一压电层是基本不含Mn（锰）的铌酸钾钠薄膜和第二压电层，第二压电层为 含铌酸钾钠薄膜。