公开(公告)号：US09209033B2

公开(公告)日：2015-12-08

申请号：US14306305

申请日：2014-06-17

Applicant: TEL EPION Inc.

Inventor： Luis Fernandez ,  Edmund Burke

IPC: H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/31056 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/66795

Abstract: A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.

Abstract translation: 描述了用于调整finFET器件中鳍片高度的气体簇离子束（GCIB）蚀刻方法。 该方法包括提供具有翅片结构的衬底和完全覆盖翅片结构的间隙填充材料层，并填充翅片结构的每个翅片之间的区域，其中每个翅片包括形成在其顶表面上的盖层，并且平坦化 间隙填充材料层直到帽层暴露在鳍结构的至少一个翅片上。 此外，该方法包括设置翅片结构的目标翅片高度，其中从盖层和翅片结构之间的界面测量的翅片高度，以及将基底暴露于GCIB并使间隙填充材料层相对于 盖层直到目标翅片高度基本上达到。