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公开(公告)号：US11118266B2
公开(公告)日：2021-09-14
申请号：US16189660
申请日：2018-11-13
申请人： TES CO., LTD
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
IPC分类号： C23C16/44 , C23C16/455 , H01L51/56 , C23C16/505 , H01L33/44 , H01L33/00 , H01L33/02 , H01L51/52 , C23C16/34 , C23C16/40
摘要： The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.
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公开(公告)号：US20190081283A1
公开(公告)日：2019-03-14
申请号：US16189452
申请日：2018-11-13
申请人： TES CO., LTD
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
CPC分类号： H01L51/56 , H01L21/02126 , H01L21/02178 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L51/5256
摘要： The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.
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公开(公告)号：US20190078208A1
公开(公告)日：2019-03-14
申请号：US16189660
申请日：2018-11-13
申请人： TES CO., LTD
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
摘要： The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.
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公开(公告)号：US20190019996A1
公开(公告)日：2019-01-17
申请号：US16124475
申请日：2018-09-07
申请人： TES CO., LTD.
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
摘要： The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
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公开(公告)号：US10777777B2
公开(公告)日：2020-09-15
申请号：US16124475
申请日：2018-09-07
申请人： TES CO., LTD
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
摘要： The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
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公开(公告)号：US10461282B2
公开(公告)日：2019-10-29
申请号：US16189452
申请日：2018-11-13
申请人： TES CO., LTD
发明人： Hong-Jae Lee , Jong-Hwan Kim , Woo-Pil Shim , Woo-Jin Lee , Sung-Yean Yoon , Don-Hee Lee
摘要： The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.
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