公开(公告)号：US20240186159A1

公开(公告)日：2024-06-06

申请号：US18525785

申请日：2023-11-30

申请人： TES CO., LTD

发明人： Jong-Seok LEE ,  Seung-Min OH ,  In-Il JUNG

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67207 ,  H01L21/6704 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785

摘要： Provided is a substrate processing apparatus including a chamber providing a processing space in which a process is performed on a substrate coated with an organic solvent using a fluid in a supercritical state, a tray unit supporting the substrate and provided to be inserted into the chamber and withdraw from the chamber through an opening of the chamber, and a detector configured to measure a resistance of the substrate.

公开(公告)号：US20240175135A1

公开(公告)日：2024-05-30

申请号：US18283810

申请日：2022-03-27

申请人： TES CO., LTD

发明人： Sung-Chul CHOI ,  Kwang-Il CHO

IPC分类号： C23C16/458 ,  C23C16/18 ,  C23C16/46

CPC分类号： C23C16/4586 ,  C23C16/18 ,  C23C16/463

摘要： The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus in which a coil connector through which a coil extension of a heating coil passes is provided in a chamber to improve assemblability and ease of maintenance by disposing, outside the chamber, a connector connecting a feedthrough and the heating coil for heating a substrate.

公开(公告)号：US20240167159A1

公开(公告)日：2024-05-23

申请号：US18283811

申请日：2022-03-27

申请人： TES CO., LTD

发明人： Sung-Chul CHOI ,  Kwang-Il CHO

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/458

CPC分类号： C23C16/45591 ,  C23C16/4408 ,  C23C16/4583

摘要： The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus including a gas supply, which uniformly supplies a process gas and is easily installed and maintained.

公开(公告)号：US20240042462A1

公开(公告)日：2024-02-08

申请号：US18227277

申请日：2023-07-27

申请人： TES CO., LTD

发明人： Kyung-Ho JANG ,  Byeong-Ho YUN ,  Min-Wook KANG

IPC分类号： B05B1/00 ,  B05C5/02 ,  C23C16/455

CPC分类号： B05B1/005 ,  B05C5/0275 ,  B05C5/0225 ,  C23C16/45565 ,  C23C16/4557

摘要： The present disclosure relates to a showerhead assembly and a substrate processing apparatus, and more particularly to a showerhead assembly and a substrate processing apparatus including a ceramic heater that heats a substrate and by which hole processing is freely performed in a relatively high temperature process.

公开(公告)号：US20220208720A1

公开(公告)日：2022-06-30

申请号：US17556906

申请日：2021-12-20

申请人： TES CO., LTD

发明人： Joo-Il HA ,  Yeong-Been KIM ,  Jae-Hwan KIM ,  Dong-Min NOH ,  Woo-Pil SHIM

IPC分类号： H01L23/00 ,  H01L23/544 ,  H01L21/66

摘要： The present invention relates to a substrate bonding apparatus including: a chamber; a first chuck disposed inside the chamber to adhere a first substrate; a second chuck disposed facingly inside the chamber toward the first chuck to adhere a second substrate; and a camera located above or under the first chuck and the second chuck to recognize first alignment key disposed on the first substrate and second alignment key disposed on the second substrate.

公开(公告)号：US11118266B2

公开(公告)日：2021-09-14

申请号：US16189660

申请日：2018-11-13

申请人： TES CO., LTD

发明人： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L51/56 ,  C23C16/505 ,  H01L33/44 ,  H01L33/00 ,  H01L33/02 ,  H01L51/52 ,  C23C16/34 ,  C23C16/40

摘要： The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

公开(公告)号：US20190081283A1

公开(公告)日：2019-03-14

申请号：US16189452

申请日：2018-11-13

申请人： TES CO., LTD

发明人： Hong-Jae Lee ,  Jong-Hwan Kim ,  Woo-Pil Shim ,  Woo-Jin Lee ,  Sung-Yean Yoon ,  Don-Hee Lee

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L51/56 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5256

摘要： The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

公开(公告)号：US20240309504A1

公开(公告)日：2024-09-19

申请号：US18600750

申请日：2024-03-10

申请人： TES CO., LTD

发明人： Yeong-Been KIM ,  Hyun-Shik AHN

IPC分类号： C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/448 ,  C23C16/45561 ,  C23C16/52

摘要： Provided is a gas supply method of a substrate processing apparatus, more particularly, a gas supply method for controlling a supplied amount of gas more precisely when a gas such as a raw material is supplied to a substrate.

公开(公告)号：US20240178023A1

公开(公告)日：2024-05-30

申请号：US18519091

申请日：2023-11-27

申请人： TES CO., LTD

发明人： Jong-Seok LEE ,  Seung-Min OH ,  In-Il JUNG

IPC分类号： H01L21/67 ,  H01L21/66

CPC分类号： H01L21/67253 ,  H01L21/6704 ,  H01L22/26

摘要： Provided is a substrate processing apparatus, more particularly, a substrate processing apparatus for detecting a progress and end point of a process for a substrate when a process such as a drying process is performed for a substrate using a supercritical fluid.

公开(公告)号：US20230392262A1

公开(公告)日：2023-12-07

申请号：US18204349

申请日：2023-05-31

申请人： TES CO., LTD

发明人： Tae-Kwang KIM

IPC分类号： C23C16/54 ,  C23C16/52 ,  C23C16/26 ,  C23C16/455 ,  C23C16/46

CPC分类号： C23C16/54 ,  C23C16/52 ,  C23C16/26 ,  C23C16/45519 ,  C23C16/463

摘要： The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to, a substrate processing apparatus and a substrate processing method capable of performing deposition on both upper and lower surfaces of a substrate in a single apparatus or a single facility when performing deposition on the lower surface of the substrate to alleviate or eliminate a bowing phenomenon of the substrate.