公开(公告)号：US20210066214A1

公开(公告)日：2021-03-04

申请号：US16552551

申请日：2019-08-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Abhijit Kumar DAS ,  Suman BELLARY ,  Clive BITTLESTONE

IPC: H01L23/00 ,  H01L23/522 ,  G06F21/72

Abstract: An integrated circuit device is provided. In some examples, an integrated circuit die of the device includes a first capacitor arranged such that when the integrated circuit die is coupled to a package, the package affects a capacitance of the first capacitor, a second capacitor disposed directly underneath the first capacitor, and a capacitance measurement circuit coupled to the first capacitor and the second capacitor to determine the capacitance of the first capacitor and a capacitance of the second capacitor. The integrated circuit device may detect tampering with the die and/or the package based on the capacitances of the first capacitor and the second capacitor.

公开(公告)号：US20180011757A1

公开(公告)日：2018-01-11

申请号：US15678315

申请日：2017-08-16

Applicant: Texas Instruments Incorporated

Inventor： Sai ZHANG ,  Yumin ZHU ,  Clive BITTLESTONE ,  Srinath RAMASWAMY

IPC: G06F11/08 ,  G06F3/06 ,  G06F12/02 ,  G06F11/10 ,  H03M13/13 ,  G11C29/52

CPC classification number: G06F11/08 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0673 ,  G06F11/1004 ,  G06F11/1016 ,  G06F11/1048 ,  G06F11/1072 ,  G06F11/1076 ,  G06F12/0246 ,  G11C29/52 ,  H03M13/13

Abstract: Disclosed embodiments include an electronic device having a write-once memory (WOM) and a memory controller. The memory controller includes a host interface receiving a data word including first and second symbols, each having at least two bits, a WOM controller that encodes the first and second symbols and outputs a WOM-encoded word including first and second WOM codes corresponding to the first and second symbols, respectively, an error correction code (ECC) controller that encodes the WOM-encoded word and outputs an ECC-encoded word including the first and second WOM codes and a first set of ECC bits corresponding to a first write operation, and a memory device interface that writes the ECC-encoded word the WOM device in the first write operation. Each of the first and second WOM codes include at least three bits with at least two of the at least three bits having the same logic value.

公开(公告)号：US20170038807A1

公开(公告)日：2017-02-09

申请号：US14816940

申请日：2015-08-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Clive BITTLESTONE ,  Joyce KWONG ,  Manish GOEL

IPC: G06F1/26

CPC classification number: G06F1/26 ,  G06F21/73 ,  G11C8/12 ,  G11C11/419 ,  G11C16/20 ,  G11C2029/4402 ,  G11C2029/5002 ,  H04L9/3278

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract translation: 公开了用于为SRAM创建物理不可克隆功能的方法和装置。 一种示例性方法包括将存储器阵列的电源电压降低到第一电压电平，第一电压电平低于与存储器阵列相关联的正常工作电压，在电源电压已经处于位置之后读取位单元的第一值 第一电压电平，以及基于所述位单元的第一值确定功能和第二值，所述第二值存储在所述位单元中，当所述存储器阵列在高于所述第一电压电平的电压电平下操作时，所述函数表示 包括存储器阵列的电路的识别。

公开(公告)号：US20170017808A1

公开(公告)日：2017-01-19

申请号：US14798067

申请日：2015-07-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Joyce KWONG ,  Clive BITTLESTONE ,  Manish GOEL

IPC: G06F21/73 ,  G11C11/419

CPC classification number: G06F21/73 ,  G09C1/00 ,  G11C11/419 ,  G11C29/50012 ,  G11C2029/4402 ,  G11C2029/5002 ,  H04L9/3278

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract translation: 公开了用于为SRAM创建物理不可克隆功能的方法和装置。 示例性方法包括在向存储器阵列施加电压之后：确定施加电压和第一位单元的第一输出之间的第一持续时间，第一输出对应于存储在第一位单元中的第一值，以及确定 在施加电压和第二位单元的第二输出之间的第二持续时间，所述第二输出对应于存储在所述第二位单元中的第二值。 示例性方法还包括基于第一持续时间和第二持续时间的比较来确定功能，建立包括存储器阵列的电路的标识的功能。