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    Galvanic Isolator
    1.
    发明申请
    Galvanic Isolator 审中-公开
    电隔离器

    公开(公告)号：US20170033614A1

    公开(公告)日：2017-02-02

    申请号：US15292156

    申请日：2016-10-13

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bharadvaj Bhamidipati ,  Swaminathan Sankaran ,  Mark W. Morgan ,  Gregory E. Howard ,  Bradley A. Kramer

    IPC分类号： H02J50/12 ,  H02J50/23 ,  H04B5/00

    CPC分类号： H02J50/12 ,  H02J50/23 ,  H04B5/005 ,  H04B5/0087

    摘要： A system on a package (SOP) can include a galvanic isolator. The galvanic isolator can include an input stage configured to transmit an input RF signal in response to receiving an input modulated signal. The galvanic isolator can also include a resonant coupler electrically isolated from the input stage by a dielectric. The resonant coupler can be configured to filter the input RF signal and transmit an output RF signal in response to the input RF signal. The galvanic isolator can further include an output stage electrically isolated from the resonant coupler by the dielectric. The output stage can be configured to provide an output modulated signal in response to receiving the output RF signal.

    摘要翻译： 封装上的系统（SOP）可以包括电隔离器。 电流隔离器可以包括输入级，其被配置为响应于接收到输入调制信号而发送输入RF信号。 电流隔离器还可以包括通过电介质与输入级电隔离的谐振耦合器。 谐振耦合器可以被配置为对输入的RF信号进行滤波，并响应输入的RF信号传输输出的RF信号。 电流隔离器还可以包括通过电介质与谐振耦合器电隔离的输出级。 输出级可以被配置为响应于接收输出RF信号而提供输出调制信号。

    Semiconductor package having etched foil capacitor integrated into leadframe
    3.
    发明授权
    Semiconductor package having etched foil capacitor integrated into leadframe 有权
    具有集成到引线框架中的蚀刻箔电容器的半导体封装

    公开(公告)号：US09142496B1

    公开(公告)日：2015-09-22

    申请号：US14444370

    申请日：2014-07-28

    申请人： Texas Instruments Incorporated

    发明人： Gregory E. Howard ,  Bernardo Gallegos ,  Rajiv Dunne ,  Darvin R. Edwards ,  Siva P. Gurrum ,  Manu J. Prakuzhy ,  Donald C. Abbott

    IPC分类号： H01L21/00 ,  H01L23/495 ,  H01L21/78 ,  H01L21/56 ,  H01L21/48

    CPC分类号： H01L23/49589 ,  H01L21/4821 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a packaged semiconductor device begins by placing a first mask on a foil of porous conductive material bonded on a strip of a first metal. The surface of the conductive material and the inside of the pores are oxidized. The first mask leaves areas unprotected. The pores of the unprotected areas are filled with a conductive polymeric compound. A layer of a second metal is deposited on the conductive polymeric compound in the unprotected areas. The first mask is removed to expose un-oxidized conductive material. The foil thickness of the un-oxidized conductive material is removed to expose the underlying first metal. This creates sidewalls of the foil and leaves un-removed the capacitor areas covered by the second metal. A second mask is placed on the strip, the second mask defines a plurality of leadframes having chip pads and leads, and protecting the capacitor areas. The portions of the first metal exposed by the second mask are removed. Sidewalls of the first metal are coplanar with the foil sidewalls. The second mask is removed.

    摘要翻译： 一种用于制造封装半导体器件的方法开始于将第一掩模放置在结合在第一金属条带上的多孔导电材料箔上。 导电材料的表面和孔的内部被氧化。 第一个面罩不保护区域。 未保护区域的孔填充有导电聚合物。 一层第二金属沉积在未保护区域的导电聚合物上。 去除第一个掩模以暴露未氧化的导电材料。 去除未氧化的导电材料的箔厚度以暴露下面的第一金属。 这产生了箔的侧壁，并且未去除由第二金属覆盖的电容器区域。 第二掩模被放置在条上，第二掩模限定具有芯片焊盘和引线的多个引线框架，并保护电容器区域。 去除由第二掩模曝光的第一金属的部分。 第一金属的侧壁与箔侧壁共面。 第二个面具被删除。

    Galvanic isolator
    4.
    发明授权
    Galvanic isolator 有权

    公开(公告)号：US10594162B2

    公开(公告)日：2020-03-17

    申请号：US15292156

    申请日：2016-10-13

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bharadvaj Bhamidipati ,  Swaminathan Sankaran ,  Mark W. Morgan ,  Gregory E. Howard ,  Bradley A. Kramer

    IPC分类号： H04B5/00 ,  H02J50/12 ,  H02J50/23

    摘要： A system on a package (SOP) can include a galvanic isolator. The galvanic isolator can include an input stage configured to transmit an input RF signal in response to receiving an input modulated signal. The galvanic isolator can also include a resonant coupler electrically isolated from the input stage by a dielectric. The resonant coupler can be configured to filter the input RF signal and transmit an output RF signal in response to the input RF signal. The galvanic isolator can further include an output stage electrically isolated from the resonant coupler by the dielectric. The output stage can be configured to provide an output modulated signal in response to receiving the output RF signal.

    Galvanic isolator
    5.
    发明授权
    Galvanic isolator 有权
    电隔离器

    公开(公告)号：US09496926B2

    公开(公告)日：2016-11-15

    申请号：US14050984

    申请日：2013-10-10

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Bharadvaj Bhamidipati ,  Swaminathan Sankaran ,  Mark W. Morgan ,  Gregory E. Howard ,  Bradley A. Kramer

    IPC分类号： H01F27/42 ,  H04B5/00

    CPC分类号： H02J50/12 ,  H02J50/23 ,  H04B5/005 ,  H04B5/0087

    摘要： A system on a package (SOP) can include a galvanic isolator. The galvanic isolator can include an input stage configured to transmit an input RF signal in response to receiving an input modulated signal. The galvanic isolator can also include a resonant coupler electrically isolated from the input stage by a dielectric. The resonant coupler can be configured to filter the input RF signal and transmit an output RF signal in response to the input RF signal. The galvanic isolator can further include an output stage electrically isolated from the resonant coupler by the dielectric. The output stage can be configured to provide an output modulated signal in response to receiving the output RF signal.

    摘要翻译： 封装上的系统（SOP）可以包括电隔离器。 电流隔离器可以包括输入级，其被配置为响应于接收到输入调制信号而发送输入RF信号。 电流隔离器还可以包括通过电介质与输入级电隔离的谐振耦合器。 谐振耦合器可以被配置为对输入的RF信号进行滤波，并响应输入的RF信号传输输出的RF信号。 电流隔离器还可以包括通过电介质与谐振耦合器电隔离的输出级。 输出级可以被配置为响应于接收输出RF信号而提供输出调制信号。