公开(公告)号：US20240363462A1

公开(公告)日：2024-10-31

申请号：US18309642

申请日：2023-04-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Vivek Swaminathan SRIDHARAN ,  Hung-Yun LIN ,  Qiao CHEN

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L23/3114 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0233 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05093 ,  H01L2224/13026 ,  H01L2924/15311

Abstract: In some examples, a package comprises a die having a device side with circuitry formed therein; a passivation layer abutting the device side; and first and second vias coupling to the device side and extending through the passivation layer. The package includes first and second metal layers coupled to the first and second vias, respectively, the first and second metal layers abutting the passivation layer. The package includes an insulation layer abutting the first and second metal layers and separating the first and second metal layers, the insulation layer having an orifice in vertical alignment with the second metal layer. The package includes a third metal layer coupled to the second metal layer through the orifice, the third metal layer vertically aligned with the first and second metal layers. The package comprises a conductive member coupled to the third metal layer. The package includes a mold compound covering package components.

公开(公告)号：US20250096156A1

公开(公告)日：2025-03-20

申请号：US18470321

申请日：2023-09-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Katleen Fajardo TIMBOL ,  Hung-Yun LIN ,  Xuan Mo LI

IPC: H01L23/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

Abstract: In examples, a package comprises a semiconductor die having a device side comprising circuitry formed therein. The package comprises a planarized passivation layer abutting the device side and a horizontal metal member coupled to the device side by way of vias extending through the passivation layer. The horizontal metal member has a thickness ranging between 4 microns and 25 microns. The package also comprises a metal post coupled to and vertically aligned with the horizontal metal member without a sputtered seed layer between the metal post and the horizontal metal member. The metal post has a vertical thickness ranging between 10 microns and 80 microns. The package also comprises a polyimide (PI) layer contacting the metal post, the horizontal metal member, and the passivation layer. The PI layer is not positioned between the metal post and the horizontal metal member. A thickness of a thickest portion of the PI layer ranges between 3 microns and 80 microns.