公开(公告)号：US20250006573A1

公开(公告)日：2025-01-02

申请号：US18345186

申请日：2023-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Maricel Fabia ESCAÑO ,  Katleen Fajardo TIMBOL ,  Jeffrey Salvacion SOLAS

IPC: H01L23/16 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: In examples, a semiconductor package comprises a semiconductor die including a device side having circuitry formed therein. The device side includes a sensor. The package includes a metal member creating a hollow cavity extending through the metal member, the hollow cavity vertically aligned with the sensor, the metal member including a lower portion having a first wall thickness and an upper portion having varying wall thicknesses greater than and less than the first wall thickness, an intersection of the upper and lower portions forming a notch on an outer side of the metal member opposing the hollow cavity. The package also includes a mold compound covering portions of the semiconductor die and contacting the metal member.

公开(公告)号：US20250069976A1

公开(公告)日：2025-02-27

申请号：US18455163

申请日：2023-08-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Vernon BUCK ,  Katleen Fajardo TIMBOL ,  Jeffrey SOLAS

IPC: H01L23/31 ,  G01N27/22 ,  H01L21/56 ,  H01L23/00 ,  H01L23/24

Abstract: An electronic device includes a substrate and a die having an active surface disposed on the substrate. A sensor is in communication with the active surface of the die and a ring is disposed on the die and encircles the sensor. The ring includes a cylindrical wall and a cap, where the cylindrical wall has an open top and the cap has a partial circular shape that extends beyond each side of the cylindrical wall, A cover is disposed on the cap such that the cover closes off the open top of the ring to form a cavity inside the ring to prevent foreign substance from entering the cavity. A mold compound covers the die and the cover, and abuts an outer surface of the cylindrical wall.

公开(公告)号：US20240258251A1

公开(公告)日：2024-08-01

申请号：US18161575

申请日：2023-01-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Katleen Fajardo TIMBOL ,  Rafael Jose Lizares GUEVARA

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/05553 ,  H01L2224/05569 ,  H01L2224/06155 ,  H01L2224/06159 ,  H01L2924/01029

Abstract: In some examples, a semiconductor package comprises a semiconductor die including circuitry, a first metal pillar coupled to the circuitry and extending away from the semiconductor die, and a second metal pillar coupled to the circuitry and extending away from the semiconductor die. A distance between the first and second metal pillars does not exceed 100 microns. The package also comprises a polyimide layer covering portions of the first and second metal pillars and covering a region between the first and second metal pillars. The polyimide layer in the region between the first and second metal pillars has a thickness not exceeding 15 microns and lacks a boundary between separate applications of polyimide to the region. The package also includes a mold compound covering the polyimide layer in the region between the first and second metal pillars. The package further includes conductive terminals coupled to the first and second metal pillars and exposed to an exterior of the mold compound.

公开(公告)号：US20250096156A1

公开(公告)日：2025-03-20

申请号：US18470321

申请日：2023-09-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Katleen Fajardo TIMBOL ,  Hung-Yun LIN ,  Xuan Mo LI

IPC: H01L23/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

Abstract: In examples, a package comprises a semiconductor die having a device side comprising circuitry formed therein. The package comprises a planarized passivation layer abutting the device side and a horizontal metal member coupled to the device side by way of vias extending through the passivation layer. The horizontal metal member has a thickness ranging between 4 microns and 25 microns. The package also comprises a metal post coupled to and vertically aligned with the horizontal metal member without a sputtered seed layer between the metal post and the horizontal metal member. The metal post has a vertical thickness ranging between 10 microns and 80 microns. The package also comprises a polyimide (PI) layer contacting the metal post, the horizontal metal member, and the passivation layer. The PI layer is not positioned between the metal post and the horizontal metal member. A thickness of a thickest portion of the PI layer ranges between 3 microns and 80 microns.