公开(公告)号：US20160351685A1

公开(公告)日：2016-12-01

申请号：US15237041

申请日：2016-08-15

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/45 ,  H01L21/306 ,  H01L29/417

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US20240274705A1

公开(公告)日：2024-08-15

申请号：US18625366

申请日：2024-04-03

Applicant: Texas Instruments Incorporated

Inventor： Chang Soo Suh ,  Jungwoo Joh ,  Dong Seup Lee ,  Shoji Wada ,  Karen Hildegard Ralston Kirmse

IPC: H01L29/778 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462 ,  B82Y30/00 ,  B82Y40/00

Abstract: A semiconductor device includes a gallium nitride based low threshold depletion mode transistor (GaN FET) with a threshold potential between −10 volts and −0.5 volts. The GaN FET has a channel layer of III-N semiconductor material including gallium and nitrogen that supports a two-dimensional electron gas (2DEG). The GaN FET has a barrier layer of III-N semiconductor material including aluminum and nitrogen over the channel layer. The GaN FET further has a p-type gate of III-N semiconductor material including gallium and nitrogen. A bottom surface of the gate, adjacent to the barrier layer, does not extend past a top surface of the barrier layer, located opposite from the channel layer. The GaN FET is free of a dielectric layer between the gate and the barrier layer.

公开(公告)号：US11978790B2

公开(公告)日：2024-05-07

申请号：US17108892

申请日：2020-12-01

Applicant: Texas Instruments Incorporated

Inventor： Chang Soo Suh ,  Jungwoo Joh ,  Dong Seup Lee ,  Shoji Wada ,  Karen Hildegard Ralston Kirmse

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462 ,  B82Y30/00 ,  B82Y40/00

Abstract: A semiconductor device includes a gallium nitride based low threshold depletion mode transistor (GaN FET) with a threshold potential between −10 volts and −0.5 volts. The GaN FET has a channel layer of III-N semiconductor material including gallium and nitrogen that supports a two-dimensional electron gas (2DEG). The GaN FET has a barrier layer of III-N semiconductor material including aluminum and nitrogen over the channel layer. The GaN FET further has a p-type gate of III-N semiconductor material including gallium and nitrogen. A bottom surface of the gate, adjacent to the barrier layer, does not extend past a top surface of the barrier layer, located opposite from the channel layer. The GaN FET is free of a dielectric layer between the gate and the barrier layer.

公开(公告)号：US20220173234A1

公开(公告)日：2022-06-02

申请号：US17108892

申请日：2020-12-01

Applicant: Texas Instruments Incorporated

Inventor： Chang Soo Suh ,  Jungwoo Joh ,  Dong Seup Lee ,  Shoji Wada ,  Karen Hildegard Ralston Kirmse

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

Abstract: A semiconductor device includes a gallium nitride based low threshold depletion mode transistor (GaN FET) with a threshold potential between −10 volts and −0.5 volts. The GaN FET has a channel layer of III-N semiconductor material including gallium and nitrogen that supports a two-dimensional electron gas (2 DEG). The GaN FET has a barrier layer of III-N semiconductor material including aluminum and nitrogen over the channel layer. The GaN FET further has a p-type gate of III-N semiconductor material including gallium and nitrogen. A bottom surface of the gate, adjacent to the barrier layer, does not extend past a top surface of the barrier layer, located opposite from the channel layer. The GaN FET is free of a dielectric layer between the gate and the barrier layer.

公开(公告)号：US09818839B2

公开(公告)日：2017-11-14

申请号：US15237041

申请日：2016-08-15

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/306 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L21/283 ,  H01L29/20 ,  H01L21/285

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US20140302672A1

公开(公告)日：2014-10-09

申请号：US13856016

申请日：2013-04-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/306

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US10707323B2

公开(公告)日：2020-07-07

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/306 ,  H01L29/417 ,  H01L29/778 ,  H01L29/201 ,  H01L29/66 ,  H01L29/45 ,  H01L29/20

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US10374057B2

公开(公告)日：2019-08-06

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/306 ,  H01L29/201 ,  H01L29/417 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/283 ,  H01L29/20 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US20190288090A1

公开(公告)日：2019-09-19

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/45 ,  H01L21/283 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US20180033865A1

公开(公告)日：2018-02-01

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285 ,  H01L29/45 ,  H01L21/283

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.