HIGH I/O DENSITY FLIP-CHIP QFN
    5.
    发明申请

    公开(公告)号:US20200258822A1

    公开(公告)日:2020-08-13

    申请号:US16274562

    申请日:2019-02-13

    Abstract: A method of making a semiconductor device includes separating a conductive structure of a leadframe into interior conductive leads using an etching process. The method includes forming a first molded structure by applying a first molding compound to a leadframe having a conductive structure, separating the conductive structure into at least two interior contact portions, attaching a semiconductor die to at least one of the interior contact portions, the at least two interior contact portions being supported by the first molding compound, and forming a second molded structure by applying a second molding compound to at least part of the semiconductor die and at least two interior contact portions.

Patent Agency Ranking