公开(公告)号：US20130263775A1

公开(公告)日：2013-10-10

申请号：US13860382

申请日：2013-04-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar ,  Paul Von Dollen ,  Shuji Nakamura ,  James S. Speck

IPC: C30B7/10 ,  C30B9/10

CPC classification number: C30B7/10 ,  C30B7/105 ,  C30B9/10 ,  C30B29/403 ,  Y10T117/1096

Abstract: A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component.

Abstract translation: 一种用于在反应器容器中生长晶体的方法和装置，其中反应器容器使用含碳纤维的材料作为结构元件，以容纳在反应器容器内作为固体，液体或气体生长晶体的材料，使得反应器容器 可承受晶体生长所需的压力或温度。 含碳纤维的材料包封反应器容器的至少一个组分，其中来自包封的组分的应力被转移到含碳纤维的材料中。 含碳纤维的材料可以围绕包封的组分缠绕一次或多次，足以在包封的组分的外部和内部之间保持所需的压力差。

公开(公告)号：US20160194781A1

公开(公告)日：2016-07-07

申请号：US14909926

申请日：2014-08-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar ,  Shuji Nakamura ,  James S. Speck

IPC: C30B7/10 ,  C30B29/40 ,  C30B9/12

CPC classification number: C30B7/105 ,  C30B9/12 ,  C30B29/403 ,  C30B35/002

Abstract: A method and apparatus for growing a Group-III nitride crystal using multiple interconnected reactor vessels to modify growth conditions during the ammonothermal growth of the Group-III nitride crystal, such that, by combining two or more vessels, it is possible to modify the conditions under which the Group-III nitride crystals are grown. In addition, the reactor vessel may use carbon fiber containing materials encapsulating oxide ceramic materials as structural elements to contain the materials for growing the Group-III nitride crystals at pressures or temperatures necessary for growth of the Group-III nitride crystals.

Abstract translation: 一种使用多个互连的反应器容器生长III族氮化物晶体以在III族氮化物晶体的氨热生长期间改变生长条件的方法和装置，使得通过组合两个或更多个容器，可以修改条件 其中III族氮化物晶体生长。 此外，反应器容器可以使用包含氧化物陶瓷材料的碳纤维的材料作为结构元件，以容纳用于在III族氮化物晶体生长所需的压力或温度下生长III族氮化物晶体的材料。

公开(公告)号：US20140116326A1

公开(公告)日：2014-05-01

申请号：US14149121

申请日：2014-01-07

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick Shane Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  B01D9/0013 ,  B01D9/0031 ,  C30B7/10 ,  C30B29/40 ,  C30B29/403 ,  H01L21/67109 ,  Y10T117/1096 ,  Y10T428/24355

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract translation: 用于III族氮化物晶体的氨热生长的反应器设计。 内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。 新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

公开(公告)号：US20130340672A1

公开(公告)日：2013-12-26

申请号：US13971355

申请日：2013-08-20

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.

Abstract translation: 在III族氮化物晶体的氨热生长过程中使用含硼化合物，气体和流体。 在III族氮化物晶体的氨热生长过程中，含硼化合物用作杂质吸附剂。 此外，含硼气体和/或超临界流体用于提高III族氮化物在所述流体中的溶解度。

公开(公告)号：US20130183225A1

公开(公告)日：2013-07-18

申请号：US13744854

申请日：2013-01-18

Applicant: The Regents of the University of California

Inventor： Paul Von Dollen ,  James S. Speck ,  Siddha Pimputkar

IPC: C30B30/02 ,  C30B9/00 ,  C30B29/40

CPC classification number: C30B30/02 ,  C30B9/00 ,  C30B29/403

Abstract: A method and apparatus for bulk crystal growth using non-thermal atmospheric pressure plasmas. This method and apparatus pertains to growth of any compound crystal involving one or more crystal components in a liquid phase (also known as the melt or solution), in communication with a non-thermal atmospheric pressure plasma source comprised of one or more other crystal components.

Abstract translation: 使用非热大气压等离子体的体晶生长的方法和装置。 该方法和装置涉及包含一种或多种在液相（也称为熔体或溶液）中的一种或多种晶体组分的化合物晶体与包含一种或多种其它晶体组分的非热大气压等离子体源的连通 。

公开(公告)号：US20130099180A1

公开(公告)日：2013-04-25

申请号：US13659389

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Paul M. von Dollen ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  Y10T117/1096

Abstract: Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method.

Abstract translation: 使用碱土金属来减少掺入使用氨热法生长的III族氮化物晶体中的杂质。