-
1.发明授权公开(公告)号：US08653503B2
公开(公告)日：2014-02-18
申请号：US13718152
申请日：2012-12-18
Applicant: The Regents of the University of California
Inventor： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L29/06
CPC classification number: H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。
-
2.发明申请OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS 有权基于非极性和半极性铝氮化铟和氮化铝氮化镓合金的光电器件公开(公告)号：US20130126828A1
公开(公告)日：2013-05-23
申请号：US13718152
申请日：2012-12-18
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L33/30
CPC classification number: H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
Abstract translation: 制造了从280nm到360nm范围内的发射波长（lambdapeak）的大功率和高效发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。
-
Search Results
2
records
(took 0.02 seconds)
