公开(公告)号：US20120146050A1

公开(公告)日：2012-06-14

申请号：US12967323

申请日：2010-12-14

申请人： THOMAS N. ADAM ,  STEPHEN W. BEDELL ,  ERIC C. HARLEY ,  JUDSON R. HOLT ,  ANITA MADAN ,  CONAL E. MURRAY ,  TERESA L. PINTO

发明人： THOMAS N. ADAM ,  STEPHEN W. BEDELL ,  ERIC C. HARLEY ,  JUDSON R. HOLT ,  ANITA MADAN ,  CONAL E. MURRAY ,  TERESA L. PINTO

IPC分类号： H01L29/161 ,  G01N23/20

CPC分类号： H01L29/1054 ,  G01N23/207 ,  G01N2223/607 ,  G01N2223/6116 ,  H01L21/823807 ,  H01L22/12

摘要： A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.

摘要翻译： 在包括半导体器件的衬底上提供的单元结构的周期性阵列上进行通过X射线衍射的晶格间距的直接测量。 每个单位结构包括单晶应变材料区域和至少一个应力产生材料区域。 例如，单晶应变材料区域可以是模拟场效应晶体管的沟道的结构，并且所述至少一个应力产生材料区域可以是与单晶应变材料区域外延对准的单晶半导体区域。 可以在各种处理状态下原位执行直接测量，以提供在实际半导体器件中场效应晶体管中的应变的在线监测。

公开(公告)号：US20130025655A1

公开(公告)日：2013-01-31

申请号：US13194301

申请日：2011-07-29

申请人： STEPHEN W. BEDELL ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： STEPHEN W. BEDELL ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

公开(公告)号：US20120261762A1

公开(公告)日：2012-10-18

申请号：US13531175

申请日：2012-06-22

申请人： STEPHEN W. BEDELL ,  HUIMING BU ,  KANGGUO CHENG ,  BRUCE B. DORIS ,  JOHNATHAN E. FALTERMEIER ,  ALI KHAKIFIROOZ ,  DEVENDRA K. SADANA ,  CHUN-CHEN YEH

发明人： STEPHEN W. BEDELL ,  HUIMING BU ,  KANGGUO CHENG ,  BRUCE B. DORIS ,  JOHNATHAN E. FALTERMEIER ,  ALI KHAKIFIROOZ ,  DEVENDRA K. SADANA ,  CHUN-CHEN YEH

IPC分类号： H01L27/088

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L27/0207 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7843 ,  H01L29/7848

摘要： A semiconductor device and method for fabricating a semiconductor device include providing a strained semiconductor layer having a first strained axis, forming an active region within a surface of the strained semiconductor layer where the active region has a longitudinal axis along the strained axis and forming gate structures over the active region. Raised source/drain regions are formed on the active regions above and over the surface of the strained semiconductor layer and adjacent to the gate structures to form transistor devices.

摘要翻译： 一种用于制造半导体器件的半导体器件和方法包括提供具有第一应变轴的应变半导体层，在应变半导体层的表面内形成有源区，其中有源区具有沿应变轴的纵向轴线并形成栅极结构 在活跃地区。 在应变半导体层的表面上方和与栅极结构相邻的有源区上形成升高的源/漏区，以形成晶体管器件。