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1.发明授权High density microwave plasma generation apparatus, and magnetron sputtering deposition system using the same 有权高密度微波等离子体发生装置和使用其的磁控溅射沉积系统公开(公告)号：US09506142B2
公开(公告)日：2016-11-29
申请号：US13913643
申请日：2013-06-10
发明人： Kensuke Sasai , Hirotaka Toyoda
CPC分类号： C23C14/357 , C23C14/086 , H01J37/3222 , H01J37/32229 , H01J37/32678 , H01J37/3405 , H05H1/46
摘要： A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.
摘要翻译： 微波等离子体产生装置（4）包括：发送微波的矩形波导（41）; 缝隙天线（42），其具有微波通过的槽（420）; 以及布置成覆盖所述槽（420）并且等离子体产生区域侧前表面平行于微波从所述槽（420）进入的入射方向的电介质部分（43）。 微波等离子体生成装置（4）能够在低于或等于1Pa的低压下产生微波等离子体（P1）。磁控溅射沉积系统（1）包括微波等离子体产生装置（4），并携带 同时在基材（20）和靶（30）之间辐射微波等离子体（P1）时使用磁控管等离子体（P2）进行薄膜沉积。 利用磁控溅射沉积系统（1），可以在其表面上形成具有小凹凸的薄膜。
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2.发明申请HIGH DENSITY MICROWAVE PLASMA GENERATION APPARATUS, AND MAGNETRON SPUTTERING DEPOSITION SYSTEM USING THE SAME 有权高密度微波等离子体发生装置和使用其的磁控溅射沉积系统公开(公告)号：US20130270110A1
公开(公告)日：2013-10-17
申请号：US13913643
申请日：2013-06-10
发明人： Kensuke Sasai , Hirotaka Toyoda
CPC分类号： C23C14/357 , C23C14/086 , H01J37/3222 , H01J37/32229 , H01J37/32678 , H01J37/3405 , H05H1/46
摘要： A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through Which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation :apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma. (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.
摘要翻译： 微波等离子体产生装置（4）包括：发送微波的矩形波导（41）; 具有微波通过的槽（420）的缝隙天线（42）; 以及布置成覆盖所述槽（420）并且等离子体产生区域侧前表面平行于微波从所述槽（420）进入的入射方向的电介质部分（43）。 微波等离子体产生装置（4）能够在低于或等于1Pa的低压下产生微波等离子体（P1）。磁控管溅射沉积系统（1）包括微波等离子体产生装置（4）和 使用磁控管等离子体进行膜沉积。 （P2），同时在基材（20）和靶（30）之间辐射微波等离子体（P1）。 利用磁控溅射沉积系统（1），可以在其表面上形成具有小凹凸的薄膜。
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