公开(公告)号：US20160108554A1

公开(公告)日：2016-04-21

申请号：US14892875

申请日：2014-06-10

Applicant: TOKUYAMA CORPORATION

Inventor： Akinori KOUKITSU ,  Yoshinao KUMAGAI ,  Toru NAGASHIMA ,  Reiko OKAYAMA

IPC: C30B25/14 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/0262

Abstract: The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0: H=VH/I(VH+VAl)  (1) (In the formula (1), VH represents a supply of the halogen-based gas; and VAl represents a supply of the aluminum halide gas); and a growth rate of the aluminum-based group III nitride single crystal is no less than 10 μm/h.

Abstract translation: 铝系III族氮化物单晶的制造方法包括将铝卤化物气体和氮源气体供给到基底基板上，使得卤化铝气体和氮源气体的反应在 碱卤化物气体和氮源气体的反应在卤素系气体的共存下进行，使得由下式（1）表示的卤素系气体比（H）为0.1以上 小于1.0：H = VH / I（VH + VAl）（1）（式（1）中，VH表示卤素系气体的供给量，VAl表示卤化铝气体的供给量）。 铝系III族氮化物单晶的生长速度不小于10μm/ h。