公开(公告)号：US20150214429A1

公开(公告)日：2015-07-30

申请号：US14607723

申请日：2015-01-28

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Yoji IIZUKA ,  Yoshihiro KATO ,  Koji NEISHI ,  Hitoshi MIURA ,  Shinya KIKUTA ,  Yusaku KASHIWAGI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/20 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer.

Abstract translation: 提供了一种棒状发光器件的制造方法，其包括：在第一导电型的GaN层上形成具有侧面和上表面的棒，所述棒由具有第一导电性的GaN制成 -类型; 选择性地生长在杆的上表面上的高电阻率层; 形成多量子阱层以覆盖所述杆和所述高电阻率层的侧表面和所述上表面; 以及形成第二导电类型的GaN层以覆盖多量子阱层。

公开(公告)号：US20210217618A1

公开(公告)日：2021-07-15

申请号：US17219320

申请日：2021-03-31

Applicant: TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

Inventor： Nobuaki TAKAHASHI ,  Hitoshi MIURA ,  Koji NEISHI ,  Ryuji KATAYAMA ,  Yusuke MORI ,  Masayuki IMANISHI

IPC: H01L21/02 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

公开(公告)号：US20160013056A1

公开(公告)日：2016-01-14

申请号：US14771046

申请日：2013-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru KASAI ,  Hitoshi MIURA

IPC: H01L21/02 ,  H05B6/78 ,  H05B6/80 ,  H05B6/70

CPC classification number: H01L21/02667 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/6719 ,  H05B6/70 ,  H05B6/701 ,  H05B6/708 ,  H05B6/72 ,  H05B6/78 ,  H05B6/80

Abstract: A heat treatment apparatus includes processing chambers into which microwaves with an effective wavelength of λg are introduced. The processing chambers are arranged parallel to each other. The length from an inner wall surface of one end of each processing chamber in the lengthwise direction to an inner wall surface of the other end thereof is m×λg/2 (m being a positive integer). An antenna sending microwave oscillation into the processing chambers is separated by λg/4+p×λg/2 (p being a positive integer including 0) from the inner wall surface of the end part in the lengthwise direction of each processing chamber. The processing chambers are disposed to be offset by λg/(2×n) (n being the number of the processing chambers) from each other in the lengthwise direction, when the processing chambers are seen to overlap with each other in a perpendicular direction to the lengthwise direction of each processing chamber.

Abstract translation: 热处理设备包括其中引入有效波长λg的微波的处理室。 处理室彼此平行布置。 从处理室的长度方向的一端的内壁面到另一端的内壁面的长度为m×λg/ 2（m为正整数）。 在每个处理室的长度方向上，从端部的内壁表面分离到处理室中发送微波振荡的天线由λg/ 4 + p×λg/ 2（p为包括0的正整数）分开。 处理室被设置为在长度方向上彼此偏移λg/（2×n）（n为处理室的数量），当处理室在垂直方向上彼此重叠时， 每个处理室的长度方向。

公开(公告)号：US20150214423A1

公开(公告)日：2015-07-30

申请号：US14481971

申请日：2014-09-10

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Shinya KIKUTA ,  Yoshihiro KATO ,  Koji NEISHI ,  Yoji IIZUKA ,  Hitoshi MIURA ,  Yusaku KASHIWAGI ,  Nobuaki TAKAHASHI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/42 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.

Abstract translation: 一种光学器件的制造方法包括在第一GaN层的主表面上形成掩模，使得掩模在第一层的主表面上的第一区域中具有一个或多个开口，在开口中选择性地生长第一GaN，使得芯 包括在所述第一层的暴露部分上形成所述第一GaN，在所述芯上形成有源层，使得形成有源区，在所述有源区上形成第二GaN层，去除所述掩模覆盖第二区的一部分，形成 在第一层上的第二区域中的第一电极，形成覆盖第二层并在第一层上的第三区域延伸到掩模上的第二电极，在第一电极上形成第一焊盘， 在第三区域中形成第二电极的区域。