公开(公告)号：US20210217618A1

公开(公告)日：2021-07-15

申请号：US17219320

申请日：2021-03-31

申请人： TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

发明人： Nobuaki TAKAHASHI ,  Hitoshi MIURA ,  Koji NEISHI ,  Ryuji KATAYAMA ,  Yusuke MORI ,  Masayuki IMANISHI

IPC分类号： H01L21/02 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

摘要： The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

公开(公告)号：US20150214429A1

公开(公告)日：2015-07-30

申请号：US14607723

申请日：2015-01-28

申请人： TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Yoji IIZUKA ,  Yoshihiro KATO ,  Koji NEISHI ,  Hitoshi MIURA ,  Shinya KIKUTA ,  Yusaku KASHIWAGI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC分类号： H01L33/20 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

摘要： There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer.

摘要翻译： 提供了一种棒状发光器件的制造方法，其包括：在第一导电型的GaN层上形成具有侧面和上表面的棒，所述棒由具有第一导电性的GaN制成 -类型; 选择性地生长在杆的上表面上的高电阻率层; 形成多量子阱层以覆盖所述杆和所述高电阻率层的侧表面和所述上表面; 以及形成第二导电类型的GaN层以覆盖多量子阱层。

公开(公告)号：US20230207316A1

公开(公告)日：2023-06-29

申请号：US18146535

申请日：2022-12-27

申请人： Tokyo Electron Limited

发明人： Koji NEISHI

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0262 ,  H01L21/02554 ,  H01L21/02565 ,  C23C16/45544 ,  C23C16/407

摘要： A film forming method of forming a metal oxide film on a substrate in a processing container, includes: supplying a raw material gas containing an organometallic precursor into the processing container; removing a residual gas remaining in the processing container after the supplying the raw material gas; subsequently, supplying an oxidizing agent that oxidizes the raw material gas into the processing container; removing a residual gas remaining in the processing container after the supplying the oxidizing agent; and supplying a hydrogen-containing reducing gas into the processing container, simultaneously with the supplying the raw material gas or sequentially after the supplying the raw material gas.

公开(公告)号：US20150214423A1

公开(公告)日：2015-07-30

申请号：US14481971

申请日：2014-09-10

申请人： TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Shinya KIKUTA ,  Yoshihiro KATO ,  Koji NEISHI ,  Yoji IIZUKA ,  Hitoshi MIURA ,  Yusaku KASHIWAGI ,  Nobuaki TAKAHASHI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/24

CPC分类号： H01L33/42 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

摘要： A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.

摘要翻译： 一种光学器件的制造方法包括在第一GaN层的主表面上形成掩模，使得掩模在第一层的主表面上的第一区域中具有一个或多个开口，在开口中选择性地生长第一GaN，使得芯 包括在所述第一层的暴露部分上形成所述第一GaN，在所述芯上形成有源层，使得形成有源区，在所述有源区上形成第二GaN层，去除所述掩模覆盖第二区的一部分，形成 在第一层上的第二区域中的第一电极，形成覆盖第二层并在第一层上的第三区域延伸到掩模上的第二电极，在第一电极上形成第一焊盘， 在第三区域中形成第二电极的区域。