公开(公告)号：US11715643B2

公开(公告)日：2023-08-01

申请号：US16890141

申请日：2020-06-02

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Daisuke Ito ,  Matthew Flaugh ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3213 ,  C23F1/12 ,  C23F1/02 ,  H01L21/66 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/32135 ,  C23F1/02 ,  C23F1/12 ,  H01L21/30621 ,  H01L21/32136 ,  H01L21/32138 ,  H01L22/12 ,  H01L21/0228

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

公开(公告)号：US11189499B2

公开(公告)日：2021-11-30

申请号：US16802554

申请日：2020-02-27

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Aelan Mosden ,  Matthew Flaugh

IPC: H01L21/3213

Abstract: Methods for the atomic layer etch (ALE) of tungsten or other metal layers are disclosed that use in part sequential oxidation and reduction of tungsten/metal layers to achieve target etch parameters. For one embodiment, a metal layer is first oxidized to form a metal oxide layer and an underlying metal layer. The metal oxide layer is then reduced to form a surface metal layer and an underlying metal oxide layer. The surface metal layer is then removed to leave the underlying metal oxide layer and the underlying metal layer. Further, the oxidizing, reducing, and removing processes can be repeated to achieve a target etch depth. In addition, a target etch rate can also achieved for each process cycle of oxidizing, reducing, and removing.

公开(公告)号：US12272558B2

公开(公告)日：2025-04-08

申请号：US17964601

申请日：2022-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Matthew Flaugh ,  Jonathan Hollin ,  Subhadeep Kal ,  Pingshan Luan ,  Hamed Hajibabaeinajafabadi ,  Yu-Hao Tsai ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.

公开(公告)号：US20210020454A1

公开(公告)日：2021-01-21

申请号：US16890141

申请日：2020-06-02

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Daisuke Ito ,  Matthew Flaugh ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3213 ,  C23F1/02 ,  C23F1/12

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

公开(公告)号：US20240096639A1

公开(公告)日：2024-03-21

申请号：US17945897

申请日：2022-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jonathan HOLLIN ,  Matthew Flaugh ,  Subhadeep Kal ,  Aelan Mosden

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/67109

Abstract: A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the other layer is etched.

公开(公告)号：US20200312673A1

公开(公告)日：2020-10-01

申请号：US16802554

申请日：2020-02-27

Applicant: Tokyo Electron Limited

Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Aelan Mosden ,  Matthew Flaugh

IPC: H01L21/3213

Abstract: Methods for the atomic layer etch (ALE) of tungsten or other metal layers are disclosed that use in part sequential oxidation and reduction of tungsten/metal layers to achieve target etch parameters. For one embodiment, a metal layer is first oxidized to form a metal oxide layer and an underlying metal layer. The metal oxide layer is then reduced to form a surface metal layer and an underlying metal oxide layer. The surface metal layer is then removed to leave the underlying metal oxide layer and the underlying metal layer. Further, the oxidizing, reducing, and removing processes can be repeated to achieve a target etch depth. In addition, a target etch rate can also achieved for each process cycle of oxidizing, reducing, and removing.