公开(公告)号：US12131947B2

公开(公告)日：2024-10-29

申请号：US17648700

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Yutaka Motoyama ,  Satoshi Takagi ,  Akari Matsunaga ,  Keisuke Fujita

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/24 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/24 ,  H01L21/02123

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

公开(公告)号：US11424143B2

公开(公告)日：2022-08-23

申请号：US16297858

申请日：2019-03-11

Applicant: Tokyo Electron Limited

Inventor： Koji Yoshii ,  Tatsuya Yamaguchi ,  Hiroyuki Hayashi ,  Mitsuhiro Okada ,  Satoshi Takagi ,  Toshihiko Takahashi ,  Masafumi Shoji ,  Kazuya Kitamura

IPC: H01L21/67 ,  H01L21/673

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

公开(公告)号：US11373876B2

公开(公告)日：2022-06-28

申请号：US16514989

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  C23C16/02 ,  H01L21/3205 ,  C23C16/24 ,  H01L21/285 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67

Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.

公开(公告)号：US10854449B2

公开(公告)日：2020-12-01

申请号：US16046222

申请日：2018-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/24

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

公开(公告)号：US20190287828A1

公开(公告)日：2019-09-19

申请号：US16297858

申请日：2019-03-11

Applicant: Tokyo Electron Limited

Inventor： Koji Yoshii ,  Tatsuya Yamaguchi ,  Hiroyuki Hayashi ,  Mitsuhiro Okada ,  Satoshi Takagi ,  Toshihiko Takahashi ,  Masafumi Shoji ,  Kazuya Kitamura

IPC: H01L21/67 ,  H01L21/673

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

公开(公告)号：US09966256B2

公开(公告)日：2018-05-08

申请号：US14844193

申请日：2015-09-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Takagi ,  Kazuya Takahashi ,  Hiroki Murakami ,  Daisuke Suzuki

IPC: C23C16/00 ,  H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C30B1/02 ,  C30B1/04 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

CPC classification number: H01L21/02532 ,  C23C16/02 ,  C23C16/22 ,  C23C16/24 ,  C30B1/026 ,  C30B1/04 ,  C30B29/08 ,  C30B29/52 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02669

Abstract: There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

公开(公告)号：US09777366B2

公开(公告)日：2017-10-03

申请号：US14730530

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC: H01L21/479 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

公开(公告)号：US09145604B2

公开(公告)日：2015-09-29

申请号：US13628268

申请日：2012-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu Kakimoto ,  Atsushi Endo ,  Takahiro Miyahara ,  Shigeru Nakajima ,  Satoshi Takagi ,  Kazumasa Igarashi

IPC: H01L21/336 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/67

CPC classification number: C23C16/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/67109

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract translation: 在被配置为真空可消耗的处理容器中的待处理物体的表面上形成种子膜和含杂质的硅膜的薄膜形成方法包括：通过提供种子进行形成种子膜的第一步骤 将包含氨基硅烷类气体和高级硅烷中的至少任一种的膜原料气体加入到处理容器内; 以及通过向所述处理容器供给硅烷系气体和含杂质气体，进行非晶态的含杂质的硅膜的第二工序。

公开(公告)号：US11557476B2

公开(公告)日：2023-01-17

申请号：US17032915

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi Takagi ,  Kazuya Kitamura ,  Hsiulin Tsai

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  C23C16/46 ,  C23C16/40

Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

公开(公告)号：US11211265B2

公开(公告)日：2021-12-28

申请号：US16379990

申请日：2019-04-10

Applicant: Tokyo Electron Limited

Inventor： Satoshi Takagi ,  Hiroyuki Hayashi ,  Hsiulin Tsai

IPC: F27B5/14 ,  F26B19/00 ,  H01L21/67 ,  C23C16/455

Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.