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公开(公告)号：US12112943B2
公开(公告)日：2024-10-08
申请号：US17656324
申请日：2022-03-24
发明人： Keita Kumagai , Hiroto Fujikawa , Ryo Watanabe
CPC分类号： H01L21/02458 , C23C16/0272 , C23C16/38 , H01L21/02123 , H01L21/02532 , H01L21/0254
摘要： A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.
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公开(公告)号：US11410847B2
公开(公告)日：2022-08-09
申请号：US16830835
申请日：2020-03-26
发明人： Hiroyuki Hayashi , Sena Fujita , Keita Kumagai , Keisuke Fujita
IPC分类号： H01L21/02 , C23C16/40 , C23C16/46 , C23C16/455
摘要： There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.
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公开(公告)号：US11114297B2
公开(公告)日：2021-09-07
申请号：US16693748
申请日：2019-11-25
发明人： Rui Kanemura , Keita Kumagai , Keisuke Fujita
摘要： According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.
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公开(公告)号：US10256128B2
公开(公告)日：2019-04-09
申请号：US14401512
申请日：2013-05-02
IPC分类号： F26B7/00 , H01L21/677 , H01L21/67 , H01L21/687 , F24F13/02 , H01L21/02 , H01L21/68
摘要： A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.
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公开(公告)号：US20150133044A1
公开(公告)日：2015-05-14
申请号：US14401512
申请日：2013-05-02
IPC分类号： H01L21/677 , F24F13/02 , H01L21/68 , H01L21/687 , H01L21/02 , H01L21/67
CPC分类号： H01L21/67742 , F24F13/02 , H01L21/02041 , H01L21/67109 , H01L21/67766 , H01L21/67781 , H01L21/681 , H01L21/68707 , Y10S901/30
摘要： A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.
摘要翻译： 一种冷却机构包括：多个支撑架，其在形成有下流的大气传送室中的多个级上沿垂直方向设置;多个支撑销，设置在每个支撑架和支撑件中; 与目标对象的背面接触的目标对象。 冷却机构还包括多个空气引导板，其设置在支撑架中并且使用下降流冷却由位于下部的支撑台支撑的目标物体。
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