EXHAUST DEVICE, PROCESSING SYSTEM, AND PROCESSING METHOD

    公开(公告)号:US20200248305A1

    公开(公告)日:2020-08-06

    申请号:US16775439

    申请日:2020-01-29

    Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20220238374A1

    公开(公告)日:2022-07-28

    申请号:US17648700

    申请日:2022-01-24

    Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

    Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory recording medium
    9.
    发明授权
    Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory recording medium 有权
    立式热处理装置的操作方法,立式热处理装置和非暂时记录介质

    公开(公告)号:US09373498B2

    公开(公告)日:2016-06-21

    申请号:US14228930

    申请日:2014-03-28

    Abstract: A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas.

    Abstract translation: 一种操作立式热处理装置的方法包括:通过供应清洁气体来清洗垂直反应室的内部; 通过多次执行包括交替地供应第一气体并供应第二气体同时从第二气体产生等离子体的循环来预涂覆反应室的内部; 通过将保持虚拟半导体衬底或导电衬底的衬底保持单元装载到反应室中并且在不供应第一气体的同时从第二气体产生等离子体的同时供给第二气体来消除电荷; 将保持多个产品半导体基板的基板保持单元装载到反应室中; 以及通过多次执行包括交替地供应所述第一气体并在从所述第二气体产生等离子体的同时供给所述第二气体的循环来在所述反应室中形成薄膜。

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